2011
DOI: 10.1063/1.3553770
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Fabrication of uniform Ge-nanocrystals embedded in amorphous SiO2 films using Ge-ion implantation and neutron irradiation methods

Abstract: Articles you may be interested inStructural and optical properties of size controlled Si nanocrystals in Si3N4 matrix: The nature of photoluminescence peak shift

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Cited by 10 publications
(5 citation statements)
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“…Transmission electron microscopy images were obtained with a 200 kV JEOL 2010F microscope, as previously described (Chen et al, 2011). …”
Section: Methodsmentioning
confidence: 99%
“…Transmission electron microscopy images were obtained with a 200 kV JEOL 2010F microscope, as previously described (Chen et al, 2011). …”
Section: Methodsmentioning
confidence: 99%
“…The calculation detail can be seen from our previous work. [42][43][44] Only a brief description will be given here. The calculations are performed using the first-principles plane wave pseudopotential method based on DFT incorporated into the CASTEP computational code.…”
Section: Resultsmentioning
confidence: 99%
“…It can be seen from Table 1 that the all fitted Raman spectra display a peak shift (Δω) to high wave number from the natural frequency (D peak centered at 1345 cm −1 and the G peak at around 1520–1580 cm −1 ) 34 and the sample with the SiN x interlayer has the least G peak shift. Raman spectroscopy has been used to measure stress incrystalline 42 and polycrystalline 26 materials. As reported about diamond, 29,30 graphite 27 and amorphous carbon films, 40 residual stress in the carbon materials changes the lattice spring constants, which can in turn change the Raman peak position.…”
Section: Resultsmentioning
confidence: 99%
“…NTD is a technique commonly used to dope bulk silicon, but for the NCs is not much explored. Recently, the promising application of the NTD for arsenic doping of Ge-NCs has been reported [30].…”
Section: Ion Implantationmentioning
confidence: 99%