2004
DOI: 10.1149/1.1799432
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Fabrication of Ultraplanar Aluminum Mirror Array by Novel Encapsulation CMP for Microoptics and MEMS Applications

Abstract: For some recent microoptic and microelectromechanical systems ͑MEMS͒ applications, metal structures are used as micromirror arrays, e.g., liquid-crystal-on-silicon ͑LCoS͒ microdisplays. The present paper reports a new approach to aluminum patterning to produce ultraplanar mirror arrays for microdisplay applications. A thin film of SiO 2 ͑interlayer dielectric or ILD͒ is deposited on a silicon wafer. The mirror pattern is etched onto the ILD using reactive ion etching. Aluminum is deposited, followed by a SiO 2… Show more

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Cited by 15 publications
(16 citation statements)
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“…Al · I n [2] where k 1 and k 2 are the chemical reactive rate constants. The aluminum reacts with the oxidizer (Oxi) to form an oxide or hydroxide species on the surface: 13 Al + Oxi k 31 −→ Al(III) [3] where k 31 is the rate constant and [Oxi] is regarded as the concentration of the oxidizer in the slurry.…”
Section: Modelingmentioning
confidence: 99%
See 1 more Smart Citation
“…Al · I n [2] where k 1 and k 2 are the chemical reactive rate constants. The aluminum reacts with the oxidizer (Oxi) to form an oxide or hydroxide species on the surface: 13 Al + Oxi k 31 −→ Al(III) [3] where k 31 is the rate constant and [Oxi] is regarded as the concentration of the oxidizer in the slurry.…”
Section: Modelingmentioning
confidence: 99%
“…Aluminum metal CMP (Al-CMP) process was once a key solution to form the Al damascene interconnects in back-end-of-line (BEOL) application. 1,2 However, due to the low resistivity and better reliability performance of copper, the Cu damascene approach has eventually taken up the mainstream in BEOL interconnect structures.…”
mentioning
confidence: 99%
“…For manufacturing such systems, the chemical-mechanical polishing (CMP) process has been widely employed, and optimized, over a decade or more [1][2][3][4]. Nevertheless, defects, such as micro-and nano-scale scratches, are invariably produced on the surfaces being polished and cause serious problems in subsequent processing of the polished wafers.…”
Section: Introductionmentioning
confidence: 99%
“…1 Aluminum metal chemical mechanical polishing (Al-CMP) is once a key process to form the Al damascene interconnects in back-endof-line (BEOL) application. 2,3 Nevertheless, the Cu damascene approach has eventually become the mainstream to fabricate the BEOL interconnect structures due to its low resistivity and better reliability performance at last decade. Recently, high-k metal gate (HKMG) integration using a replacement metal gate (RMG) approach was led by Intel, who had the first 45 nm HKMG processor in volume production in 2007.…”
mentioning
confidence: 99%