Fabrication of ultra-high density InAs-stacked quantum dots by strain-controlled growth on InP(311)B substrate

Akahane, Kouichi; Ohtani, Naoki; Okada, Yoshitaka; Kawabe, Mitsuo

doi:10.1016/s0022-0248(02)01701-3

Cited by 135 publications

(92 citation statements)

References 15 publications

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“…However, the tensile strain generated by the InAs Qdots is not compensated as the capping layer is normally lattice matched to the substrate material. This issue has been successfully addressed by Akahane et al using MBE growth technique who proposed and demonstrated a strain-compensation scheme [32]. The approach was based on adjusting the composition of the InGaAlAs spacer layers to have a smaller lattice constant than that of the InP substrate in order to achieve strain compensation after the growth of one cycle of Qdots and the spacer layer.…”

Section: Qdots On (311)b Inp Substratementioning

confidence: 99%

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Khan

Ooi

2014

Progress in Quantum Electronics

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The advances in lasers, electronic and photonic integrated circuits (EPIC), optical interconnects as well as the modulation techniques allow the present day society to embrace the convenience of broadband, high speed internet and mobile network connectivity. However, the steep increase in energy demand and bandwidth requirement calls for further innovation in ultra-compact EPIC technologies. In the optical domain, innovation in the laser technologies beyond the current quantum well (Qwell) based laser technologies are already taking place and presenting very promising results. Homogeneously grown quantum dot (Qdot) lasers, can serve in the future energy saving information and communication technologies (ICT) as the work-horse for transmitting information through optical fiber. The encouraging results in the zero-dimensional (0D) structures emitting at 980 nm, in the form of vertical cavity surface emitting laser (VCSEL), are already operational at low threshold current density and capable of 40 Gbps error-free transmission at 108 fJ/bit. Eventual achievements for lasers operating in the O-, C-, L-, U-bands, and beyond will eventually lay the foundation for green ICT. On the hand, the inhomogeneously grown quasi 0D quantum dash (Qdash) lasers are brilliant solutions for potential broadband connectivity in server farms or access network. A single broadband Qdash laser operating in the stimulated emission mode can replace tens of discrete narrow-band lasers in dense wavelength division multiplexing (DWDM) transmission thereby further saving energy, cost and footprint. In this article, we review the progress of both Qdots and Qdash devices based on the InAs/InGaAlAs/InP and InAs/InGaAsP/InP material systems, from the angles of growth and device performance.2

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Section: Qdots On (311)b Inp Substratementioning

confidence: 99%

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Khan

Ooi

2014

Progress in Quantum Electronics

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“…25 As buffer on an n-type InP(311)B substrate, where a high dot density and homogeneity, as well as a good rotational dot-symmetry can be achieved. [43][44][45] The samples feature an optically active layer of QDots with a nominal thickness of four to six monolayers (MLs) of InAs which is embedded between 150 nm thick In 0.53 Al 0.22 Ga 0.25 As barrier layers ( Fig. 1(a)).…”

Section: As Barriersmentioning

confidence: 99%

Temperature dependent carrier dynamics in telecommunication band InAs quantum dots and dashes grown on InP substrates

Jahan

Hermannstädter

Huh

et al. 2013

Journal of Applied Physics

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Correlations between the morphology and emission properties of trench defects in InGaN/GaN quantum wells J. Appl. Phys. 113, 073505 (2013) Optical characterization of free electron concentration in heteroepitaxial InN layers using Fourier transform infrared spectroscopy and a 2×2 transfer-matrix algebra J. Appl. Phys. 113, 073502 (2013) Influence of structural anisotropy to anisotropic electron mobility in a-plane InN Appl. Phys. Lett. 102, 061904 (2013) Sub-250nm light emission and optical gain in AlGaN materials J. Appl. Phys. 113, 013106 (2013) Effects of pumping on propagation velocities of confined exciton polaritons in GaAs/AlxGa1−xAs double heterostructure thin films under resonant and non-resonant probe conditions J. Appl. Phys. 113, 013514 (2013) Additional information on J. Appl. Phys.

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“…A multi-layer InAs QD structure was formed on InP(311)B based on MBE with a strain-compensation scheme. 31 As schematically shown in Fig. 1 obtained here.…”

Section: A Experimentsmentioning

confidence: 64%

Analysis of optical near-field energy transfer by stochastic model unifying architectural dependencies

Naruse

Akahane

Yamamoto

et al. 2014

Journal of Applied Physics

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Abstract:We theoretically and experimentally demonstrate energy transfer mediated by optical near-field interactions in a multi-layer InAs quantum dot (QD) structure composed of a single layer of larger dots and N layers of smaller ones. We construct a stochastic model in which optical near-field interactions that follow a Yukawa potential, QD size fluctuations, and temperature-dependent energy level broadening are unified, enabling us to examine device-architecture-dependent energy transfer efficiencies. The model results are consistent with the experiments. This study provides an insight into optical energy transfer involving inherent disorders in materials and paves the way to systematic design principles of nanophotonic devices that will allow optimized performance and the realization of designated functions.3

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Fabrication of ultra-high density InAs-stacked quantum dots by strain-controlled growth on InP(311)B substrate

Cited by 135 publications

References 15 publications

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Temperature dependent carrier dynamics in telecommunication band InAs quantum dots and dashes grown on InP substrates

Analysis of optical near-field energy transfer by stochastic model unifying architectural dependencies

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