Fabrication of two-dimensional n- and p-type in-plane gate transistors from the same p-doped GaAs/In0.1Ga0.9As/Al0.33Ga0.67As heterostructure

Reuter, D.; Seekamp, A; Wieck, A. D.

doi:10.1016/j.physe.2003.11.141

Cited by 5 publications

(4 citation statements)

References 11 publications

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“…Regioregular P3HT (regioregular ratio >94%, weight average molecular weight 55 kDa) was purchased from Rieke Metals Inc., dissolved in TCB at a concentration of 2.5 wt%, was spin-coated onto the PMMA-coated substrate at 3 krpm for 4 min and annealed in nitrogen for 1 h at 120 • C. Subsequently, polybutylmethacrylate (PBMA; weight average molecular weight 337 000; glass transition temperature (T g ) 13-35 • C [23] purchased from Sigma-Aldrich) dissolved in anisole (7.5 wt%), a thermoplastic for geometric patterning, was spin-coated onto the substrate at 3 krpm for 2 min and baked for 30 min at 80 • C in order to evaporate the solvent. We tested a range of polymer/solvent combinations and observed that the minimum decrease in final film conductivity was obtained using this formula.…”

Section: Methodsmentioning

confidence: 99%

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Fabrication of planar organic nanotransistors using low temperature thermal nanoimprint lithography for chemical sensor applications

et al. 2010

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A new fabrication process for the patterning of organic semiconductors at the nanoscale has been developed using low temperature thermal nanoimprint lithography and the details of this process are discussed. Novel planar nanotransistors have been fabricated and characterized from poly(3-hexylthiophene) (P3HT) and we demonstrate the feasibility of using such devices as highly sensitive chemical sensors.

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Section: Methodsmentioning

confidence: 99%

“…IPG transistors and similar devices have now been realized in several material systems including SiGe/Si [18], GaAs/AlGaAs [19], siliconon-insulator [20], indium tin oxide [21] and diamond-based materials [22]. Additionally, IPG based on n-type and p-type channels have been realized on a single substrate [23].…”

Section: Introductionmentioning

confidence: 99%

Fabrication of planar organic nanotransistors using low temperature thermal nanoimprint lithography for chemical sensor applications

et al. 2010

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“…One concept for a promising semiconductor device is the in-plane gate (IPG) device structure. [2][3][4][5][6][7][8] In contrast to the current field-effect transistors used in electronic circuits, the IPG device has lateral gate structures formed by separating the gate area from the channel. Therefore, the gates consist of the same semiconductor material as the channels.…”

Section: Introductionmentioning

confidence: 99%

Negative Differential Resistance in InGaAs/InAlAs Nanoscale In-Plane Structures

Komatsuzaki

Higashi

Kyougoku

et al. 2010

Jpn. J. Appl. Phys.

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Nanoscale in-plane structure devices are fabricated by electron beam lithography followed by electron cyclotron resonance reactive ion etching. We investigate the negative differential resistance (NDR) of InGaAs/InAlAs in-plane structure devices. The NDR appears in the current–voltage (I–V) characteristics of simple two-terminal in-plane short-channel devices. NDR characteristics depend on the effective channel width of in-plane gate transistors and become more pronounced when the channel conductance is increased by applying gate voltages. In a short-channel in-plane gate transistor, a more prominent NDR is observed and the NDR appears even at room temperature. In addition, the NDR onset voltage shifts to lower voltages when the channel length decreases. The NDR phenomenon is most likely caused by the real-space transfer of electrons from a high mobility channel to a low mobility layer.

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“…The implantation patterns, which should be aligned during the implantation process with two ion species, together with the necessary supplementary refocusing step, are eliminated. This method opened the possibility of fabrication of two‐dimensional n‐ and p‐type IPG transistors on the same heterostructure 17, 18.…”

Section: Introductionmentioning

confidence: 99%

In‐plane gate transistors implanted with different channel geometries by focussed ion beam in positive mode pattern definition technique

Draghici

Diaconescu

Melnikov

et al. 2010

Physica Status Solidi (a)

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In‐plane gate (IPG) transistors with various channel geometries have been fabricated by focus ion beam implantation technique in positive pattern definition mode on GaAs/AlxGa1−xAs heterostructures. Both n‐ and p‐type channel transistors were obtained for either n‐ or p‐doped heterostructures, by implantation of the channel or the gate regions with the complementary dopant type to compensate the initial doping. The current–voltage characteristics showed that the channel can be fully controlled by a gate bias, i.e., it can be completely depleted or enhanced, but two gates are needed to control the channel. Different channel geometries were studied, the most efficient being the “Z‐shaped” one. The n‐type channel IPG transistors present source–drain currents of few hundreds of microamperes, which is two to three orders of magnitudes higher than that for the p‐type channel ones.

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Fabrication of two-dimensional n- and p-type in-plane gate transistors from the same p-doped GaAs/In0.1Ga0.9As/Al0.33Ga0.67As heterostructure

Cited by 5 publications

References 11 publications

Fabrication of planar organic nanotransistors using low temperature thermal nanoimprint lithography for chemical sensor applications

Fabrication of planar organic nanotransistors using low temperature thermal nanoimprint lithography for chemical sensor applications

Negative Differential Resistance in InGaAs/InAlAs Nanoscale In-Plane Structures

In‐plane gate transistors implanted with different channel geometries by focussed ion beam in positive mode pattern definition technique

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