Nuclear Instruments and Methods in Physics Research Section B:
2009
DOI: 10.1016/j.nimb.2009.01.074
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Fabrication of Total-Dose-Radiation-Hardened (TDRH) SOI wafer with embedded silicon nanoclusters

Aimin Wu
1
,
Xi Wang
2
,
Xing Wei
3
et al.
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Cited by 4 publications
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Total ionizing dose radiation hardening technology based on double-charge multiple-step ion implantation

Wu
1
,
Zong-guang
2
,
Genshen
3
et al. 2023
Microelectronics Reliability
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Total ionizing dose radiation hardening technology based on double-charge multiple-step ion implantation

Wu
1
,
Zong-guang
2
,
Genshen
3
et al. 2023
Microelectronics Reliability
1
0
0
0
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Influence of Si nanocrystal embedded in BOX on radiation and electrical properties of SOI wafer

Bi
1
,
Zhang
2
,
Chen
3
et al. 2012
Nuclear Instruments and Methods in Physics Research Section B:
8
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Transportation of carriers in silicon implanted SiO2 films during ionizing radiation

Chen
1
,
Zhang
2
,
Wei
3
et al. 2012
Nuclear Instruments and Methods in Physics Research Section B:
4
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