Fabrication of smooth β-SiC surfaces by reactive ion etching using a graphite electrode

Reichert, W.; Stefan, D.; Obermeier, Ε.; Wondrak, W.

doi:10.1016/s0921-5107(96)01961-7

Cited by 11 publications

(8 citation statements)

References 4 publications

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“…As has been reported in many papers [8][9][10][11][12][13][14][15][16] for the RIE of SiC, a fluorinated etching gas was mixed with oxygen to increase the etch rate and to reduce residue. The tendency of an increase in etch rate by oxygen addition can be explained partly by the promotion of a fluorine generation reaction between SF n radicals and oxygen 22 , and partly by the promotion of carbon removal in forms such as carbon mono-and dioxide.…”

Section: Resultsmentioning

confidence: 99%

“…For micromachining of SiC, lost molding, 3,6,7 reactive ion etching ͑RIE͒ [8][9][10][11][12][13][14][15][16] and laser-assisted photoelectrochemical etching 17,18 have been used. Yasseen et al 3 fabricated a SiC microresonator and microgear by removing a silicon dioxide sacrificial layer on a silicon substrate after coating the substrate with a SiC film by chemical vapor deposition ͑CVD͒.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Deep reactive ion etching of silicon carbide

Tanaka

Rajanna

Abe

et al. 2001

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inSmoothing single-crystalline SiC surfaces by reactive ion etching using pure NF3 and NF3/Ar mixture gas plasmas J. Vac. Sci. Technol. A 32, 051303 (2014); 10.1116/1.4893421Microtrenching-free two-step reactive ion etching of 4H-SiC using NF3/HBr/O2 and Cl2/O2In this article, we describe more than 100-m-deep reactive ion etching ͑RIE͒ of silicon carbide ͑SiC͒ in oxygen-added sulfur hexafluoride ͑SF 6 ) plasma. We used a homemade magnetically enhanced, inductively coupled plasma reactive ion etcher ͑ME-ICP-RIE͒ and electroplated nickel masks. First, 5 h etching experiments using etching gases with 0%, 5%, 10% and 20% oxygen were performed by supplying rf power of 150 and 130 W to an ICP antenna and a sample stage, respectively. They demonstrated a maximum etch rate of 0.45 m/min and residue-free etching in the case of 5% oxygen addition. Observation of the cross sections of etched samples using a scanning electron microscope confirmed a microloading effect, which is reduction of the etched depth with a decrease in the mask opening width. Next, a 7 h etching experiment using an etching gas with 5% oxygen was performed by increasing the rf power to the sample stage to 150 W. This yielded an etched depth of 216 m.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Deep reactive ion etching of silicon carbide

Tanaka

Rajanna

Abe

et al. 2001

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

View full text Add to dashboard Cite

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“…Reactive ion etching (RIE), electron cyclotron resonance and magnetron-enhanced RIE techniques are currently used for patterning and drilling [19,20]. SF 6 /O 2 plasma and SF 6 /O 2 inductively coupled plasma (ICP) are used to etch thin films [21] and bulk substrates [22] respectively. However these techniques have serious drawbacks including very low etch rates (nm per sec), poor etch selectivity, non-uniformity, contamination and inability to create high aspect ratio structures.…”

Section: Introductionmentioning

confidence: 99%

Femtosecond-pulsed laser micromachining of a 4H–SiC wafer for MEMS pressure sensor diaphragms and via holes

Dong

Nair

Molian

et al. 2008

J. Micromech. Microeng.

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The challenging issues in conventional microfabrication of SiC pressure sensor diaphragms from bulk wafers are low etch rates, thicker (>40 µm) diaphragms, low spatial resolutions, rough surfaces and substantial contamination. In via hole drilling of SiC, the critical concern is the low drilling speed (nm per minute). In this work, femtosecond (fs)-pulsed laser ablation was conducted to overcome some of these deficiencies. Circular diaphragms (0.5 to 1 mm) by trepanning mode and via holes (30-50 µm) by percussion drilling mode were micromachined in 250 µm thick 4H-SiC single crystals using an 800 nm wavelength, 120 fs, 1 mJ Ti:sapphire laser. Pulse energy, number of pulses and scan rate were varied to obtain a high etch rate and high quality features. Results showed that the etch rates are 2-10 µm per pulse, diaphragm thicknesses are 20-200 µm, surface roughness is 1-2 µm Ra and via hole drilling speeds are up to 25 µm per second. The etch depth control was well within ± 1%. High aspect ratio features with excellent spatial resolutions were obtained due to the absence of thermal damages such as a recast layer and contamination. Thus, femtosecond-pulsed laser ablation by virtue of its unique characteristics such as multiphoton ionization and the absence of lattice heating offers high speed, precision and accuracy in micromachining 4H-SiC wafers.

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“…The micromasking was avoided in the case of the graphite electrode. 16 A. J. Steckl et al investigated longer term CHF 3 /O 2 reactive ion etching of β-SiC thin films. The columnar residues were found in the etched regions.…”

Section: -2mentioning

confidence: 99%

“…14 The residues can be formed by metal mask, Al electrode, polymer (SiO x F y ), metal fluoride and so on. [15][16][17][18][19] We call this phenomenon the micromasking effect. Several approaches to prevent or eliminate residue formation are reported.…”

Section: Introductionmentioning

confidence: 99%

Crystal structure induced residue formation on 4H-SiC by reactive ion etching

et al. 2016

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The (0001¯) C face of 4H-SiC wafer was etched by reactive ion etching in SF6/O2 plasma. The effect of etching parameters, such as work pressure, SF6:O2 ratio and etching time, on the residue formation were systematically investigated. The residue morphologies were observed by scanning electron microscopy and atomic force microscopy, respectively. The residues have spike shape and their facets are defined as {11¯02¯} crystal planes. They are formed at beginning of the etching and no new spikes are generated as prolonging etching time. Both work pressure and SF6:O2 ratio play significant role in the spike formation. The residues can be eliminated completely by increasing the SF6:O2 ratio and work pressure. On the basis of experimental results and of 4H-SiC crystal structure, the spike formation model is proposed.

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Fabrication of smooth β-SiC surfaces by reactive ion etching using a graphite electrode

Cited by 11 publications

References 4 publications

Deep reactive ion etching of silicon carbide

Deep reactive ion etching of silicon carbide

Femtosecond-pulsed laser micromachining of a 4H–SiC wafer for MEMS pressure sensor diaphragms and via holes

Crystal structure induced residue formation on 4H-SiC by reactive ion etching

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