Abstract:Diamond films of small roughness have been deposited onto thermally oxidized Si substrates by a process of anisotropic crystalline growth induced by nitrogen in a hot-filament chemical vapor deposition reactor. Ethanol (C2H5OH), diluted in hydrogen and nitrogen, was used as the source of carbon. At high concentrations, nitrogen tends to suppress the diamond growth in the 〈100〉 direction, which allows the growth of square mesoscopic-like crystals (“plates”) of large area in the directions parallel to the surfac… Show more
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