Fabrication of Silicon Oxide Nanowires Embedded with Au Nanoparticle or Au Nanowire: Its Use as Template to Hollow Silica Nanotube

Abstract

Silicon oxide nanowires which contains Au nanoparticles or an Au nanowire were fabricated by thermal evaporation chemical vapor deposition method using Au as catalyst. Silicon oxide wafers were used as the collector. The diameters of silicon oxide nanowires range from 20 to 150 nm. The larger the diameter of Si nanowire is, the larger the diameter of embedded Au nanoparticles. The separation between Au nanoparticles increases with the diameter. Different forms of silicon oxide nanowires were observed at different growth temperature: silicon oxide nanowires embedded with Au-containing nanoparticles at 1250 degrees C and Au/silicon oxide coaxial nanocable at 1425 degrees C. Using KCN solution, the nanoparticles or the nanocable inside silicon oxide nanowires were extracted, leaving hollow silicon oxide nanotubes.

Solid source growth of Si oxide nanowires promoted by carbon nanotubes

“…Besides, there are some particles on tip parts of the SiONWs, which are possibly the Ni catalysts. The growth is likely to follow a tip growth mode, which typically happened in solid source growth of SiONWs [25,26]. Here, the lengths of the SiONWs could reach several tens of micrometers, forming a densely packed layer with thickness of over 30 μm.…”

Carbon based nanostructures for electrochemical energy storage

“…CNT array after magnetron sputtering of Ni is shown in Figure 4 growth is likely to follow a tip growth mode, which typically happened in solid source growth of SiONWs. [191,192] Here, the lengths of the SiONWs could reach several tens of micrometers, forming a densely packed layer with thickness of over 30 μm. Given the growth time of 15 minutes, the growth rate can be considered as very fast as compared to previous reports on solid source growth of SiONWs catalyzed by Ni.…”