Fabrication of Silicon Nanopillar Teradot Arrays by Electron‐Beam Patterning for Nanoimprint Molds

Wi, Jung‐Sub; Lee, Hyosung; Lim, Ki Moo; Nam, Sung-Wook; Kim, Hyun-Mi; Park, Soo Yeon; Lee, Jaejong; Hong, Chris; Jin, Sung‐Ho; Kim, Ki-Bum

doi:10.1002/smll.200800625

Cited by 31 publications

(26 citation statements)

References 22 publications

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“…Control of nanopatterns has been achieved by different methods, such as the production of nanoimprint masks by exposure of polymers to electron beams and subsequent pattern transfer to films or substrates, 1 or the exploitation of self-organization processes during ion beam irradiation of specific materials resulting in arrays of hexagonally ordered dots 2 or holes. Control of nanopatterns has been achieved by different methods, such as the production of nanoimprint masks by exposure of polymers to electron beams and subsequent pattern transfer to films or substrates, 1 or the exploitation of self-organization processes during ion beam irradiation of specific materials resulting in arrays of hexagonally ordered dots 2 or holes.…”

Section: Introductionmentioning

confidence: 99%

From sponge to dot arrays on (100) Ge by increasing the energy of ion impacts

Böttger

Bischoff

Heinig

et al. 2012

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Ge surfaces of up to 780 K temperature have been irradiated at normal incidence with up to 10 17 Bi þ ions cm À2 having kinetic energies from 10 to 30 keV. The resulting surface morphologies have been studied by scanning electron microscopy. While at room temperature the impacts of highenergy Bi þ ions result in porous networks, at elevated irradiation temperatures hexagonally ordered dot arrays are formed, whereas after a further temperature increase the surface becomes smooth. The comprehensive experimental studies have been summarized in a phase diagram of surface morphologies in the ion energy versus substrate temperature plane. In this phase diagram, the onset of dot formation with increasing substrate temperature has been consistently modeled by nanomelting of the collision cascade volume of ion impacts, thereby taking into account the thermodynamic parameters of amorphous Ge (melt temperature, heat of fusion, and heat capacity) as well as the energy density deposited in the cascade volume as predicted by established simulation programs.

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Section: Introductionmentioning

confidence: 99%

From sponge to dot arrays on (100) Ge by increasing the energy of ion impacts

Böttger

Bischoff

Heinig

et al. 2012

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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“…E-beam lithography and reactive ion etching (RIE) processes were used to form small nanopores less than 10 nm. The resolution of the top-down drilling method depends on many factors, such as beam scattering [159], resist chemistry [160], and critical dimension loss during pattern transfer [161], which is adverse for fabricating sub-10 nm nanopores. The ALD method was used to shrink the pore size by depositing controllable film on the nanometer scale [157,162].…”

Section: Fabrication Of Nanochannelsmentioning

confidence: 99%

Fabrication of Nanochannels

et al. 2015

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Nature has inspired the fabrication of intelligent devices to meet the needs of the advanced community and better understand the imitation of biology. As a biomimetic nanodevice, nanochannels/nanopores aroused increasing interest because of their potential applications in nanofluidic fields. In this review, we have summarized some recent results mainly focused on the design and fabrication of one-dimensional nanochannels, which can be made of many materials, including polymers, inorganics, biotic materials, and composite materials. These nanochannels have some properties similar to biological channels, such as selectivity, voltage-dependent current fluctuations, ionic rectification current and ionic gating, etc. Therefore, they show great potential for the fields of biosensing, filtration, and energy conversions. These advances can not only help people to understand the living processes in nature, but also inspire scientists to develop novel nanodevices with better performance for mankind.

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“…12 In the case of electron-beam lithography, the smallest dotpattern pitch size (the highest density of nanodots) reported thus far is approximately 15 nm pitch in a resist and 25 nm pitch in an Si wafer using hydrogen silsesquioxane (HSQ) as a resist material. 13 This number correlates to a density of 1 Tbit/in. 2 Considering that the areal density of commercialized hard disk media is now as great as 541.5 Gbits/in.…”

Section: Introductionmentioning

confidence: 96%

Fabrication of ultra-high-density nanodot array patterns (∼3 Tbits/in.2) using electron-beam lithography

Lee

Kim

Cho

et al. 2011

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Articles you may be interested inActive-matrix nanocrystalline Si electron emitter array with a function of electronic aberration correction for massively parallel electron beam direct-write lithography: Electron emission and pattern transfer characteristics J. Vac. Sci. Technol. B 31, 06F703 (2013); 10.1116/1.4827819 Long nanoscale gaps on III-V substrates by electron beam lithography J. Vac. Sci. Technol. B 30, 06F305 (2012); 10.1116/1.4766881 Tilted nanostructure fabrication by electron beam lithography J. Vac. Sci. Technol. B 30, 06F302 (2012); 10.1116/1.4754809 Fabrication of nanodot array molds by using an inorganic electron-beam resist and a postexposure bakeThe authors fabricated 15 nm pitch scale high-density dot patterns on a Si substrate using a hydrogen silsesquioxane electron-beam (e-beam) resist, vacuum treatment as a prebake, and vertical sidewall etching. The e-beam lithography was performed at 100 keV. The dot density fabricated was close to 3 Tbits/in., 2 which is one of the highest density patterns reported thus far. The process window was quite wide and the result can be easily and routinely duplicated.

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Fabrication of Silicon Nanopillar Teradot Arrays by Electron‐Beam Patterning for Nanoimprint Molds

Cited by 31 publications

References 22 publications

From sponge to dot arrays on (100) Ge by increasing the energy of ion impacts

From sponge to dot arrays on (100) Ge by increasing the energy of ion impacts

Fabrication of Nanochannels

Fabrication of ultra-high-density nanodot array patterns (∼3 Tbits/in.2) using electron-beam lithography

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