Fabrication of ultra-high-density nanodot array patterns (∼3 Tbits/in.2) using electron-beam lithography

Abstract

Articles you may be interested inActive-matrix nanocrystalline Si electron emitter array with a function of electronic aberration correction for massively parallel electron beam direct-write lithography: Electron emission and pattern transfer characteristics J. Vac. Sci. Technol. B 31, 06F703 (2013); 10.1116/1.4827819 Long nanoscale gaps on III-V substrates by electron beam lithography J. Vac. Sci. Technol. B 30, 06F305 (2012); 10.1116/1.4766881 Tilted nanostructure fabrication by electron beam lithography J. Vac. Sci. Technol. B 30, 06F302 (2012); 10.1116/1.4754809 Fabrication of nanodot array molds by using an inorganic electron-beam resist and a postexposure bakeThe authors fabricated 15 nm pitch scale high-density dot patterns on a Si substrate using a hydrogen silsesquioxane electron-beam (e-beam) resist, vacuum treatment as a prebake, and vertical sidewall etching. The e-beam lithography was performed at 100 keV. The dot density fabricated was close to 3 Tbits/in., 2 which is one of the highest density patterns reported thus far. The process window was quite wide and the result can be easily and routinely duplicated.

Geometric Control of Cell Behavior by Biomolecule Nanodistribution

“…First, we included a layer of ITO to ensure the compatibility of EBL with our chosen substratequartz-based cover glasses used for cell culture. Standard EBL protocols are usually performed on a special substrate (e.g., a silicon wafer) that has good electron-conducting properties necessary to prevent charging distortion. ,, However, a quartz-based substrate has poor conductive properties, which leads to the deflection of incoming electrons by surface charges and is a significant source of pattern-placement error. Therefore, to eliminate this drifting effect, a thin layer (20 nm) of ITO was sputter-coated onto the cover glass substrate to ensure electron-conductive properties. , This deposition successfully eliminated beam drifting on a sample surface coated with ITO and allowed the production of precise patterns of grid-lines of approximately 100 nm in width (Figure B), a resolution comparable to the EBL limits obtained with standard silicon-wafer surfaces .…”

“…Standard EBL protocols are usually performed on a special substrate (e.g., a silicon wafer) that has good electron-conducting properties necessary to prevent charging distortion. 70 , 72 , 73 However, a quartz-based substrate has poor conductive properties, which leads to the deflection of incoming electrons by surface charges and is a significant source of pattern-placement error. Therefore, to eliminate this drifting effect, a thin layer (20 nm) of ITO was sputter-coated onto the cover glass substrate to ensure electron-conductive properties.…”

Study the Effect of Chemical Treatment on Substrate Surface on the Formation Nanodots Array and its Optical Properties

“…Metallic nanostructures are generally fabricated by the top-down processes such as electron beam lithography (EBL) [19][20], focus ion beam (FIB) [21] or by the bottom-up processes such as like the self-organization methods [22][23] and anodic aluminum oxide (AAO) template [24] or by hybrid processes developed by our group [9][10][11][12]25].…”