Abstract:We report a process for Silicon (Si) nano-crystal dots fabrication using a cold-wall Ultrahigh-Vacuum Chemical Vapor Deposition (UHV-CVD) system. Si2H6 gas was used as the pre-curser and irradiated upon SiO2 film on Si wafer to form Si nano-crystal dots.In our system, nucleation, growth, and coalescence phases of nano-crystal dots on SiO2 were found to be related with the optical pyro-meter's read-out curve.At first, the optimum gas irradiation time which gives the highest dot density without coalescence was d… Show more
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