Fabrication of SiC epitaxial structures for devices by the method of sublimation in an open system

Anikin, M. M.; Lebedev, A. A.; Pyatko, S. N.; Strel'chuk, Anatoly M.; Syrkin, A. L.

doi:10.1016/0921-5107(92)90201-j

Cited by 27 publications

(3 citation statements)

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“…It can be note that no peak is detected close to the band-gap energy (3.1 eV) due to the indirect gap of 6H-SiC. The bump at 2.65 eV in the JFET emission curves could be related to donor-to-acceptor pair (N, Al) recombinations, as previously reported [10] and its nature could be confirmed by its presence in cathodoluminescence spectra also (not reported here). It will no longer be discussed here since it is given extended treatment in the literature.…”

Section: Resultssupporting

confidence: 81%

“…EL measurements [9][10][11] on SiC diodes have been used mainly to investigate the blue-ultraviolet spectral region where 0268-1242/04/010045+05$30.00 © 2004 IOP Publishing Ltd Printed in the UK an emission band related to exciton transitions in the region 2.8-2.9 eV and a series of bands peaking at 2.1-2.7 eV (donorto-acceptor pairs) have been found. Recently Bano et al [12] reported results on EL spectra at room temperature from 4Hand 6H-SiC MOSFETs showing an emission peak at about 1.5 eV.…”

Section: Introductionmentioning

confidence: 99%

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Optical characterization of radiative deep centres in 6H–SiC junction field effect transistors

Pavesi

Manfredi

Rigolli

et al. 2003

Semicond. Sci. Technol.

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Electroluminescence studies were carried out as a function of bias and temperature to understand the nature of deep centres in 6H-SiC n-channel junction field-effect transistors (FETS) for high-power applications. Vanadium impurities in different configurations were suggested to be responsible for the levels found. The contributions of hot and cold carriers were distinguished by biasing the devices both in the transistor-like and in the diode-like configurations. This allowed us to spatially localize the deep centres inside the device structure. In the transistor-like configuration, two broad emission bands (1.1-1.7 eV and 2.5-3 eV), superimposed to the contribution arising from hot carrier intraband transitions, were detected. The A band at 1.17 eV (observed only in the transistor-like configuration) was attributed to a radiative transition between an excited level and its ground state of a vanadium centre located in the n-type conductive channel. The B (1.32 eV) and C (1.62 eV) bands originated from the space-charge region of the p-n junctions in both the configurations and, contrary to the A band, they were characterized by a thermal capture barrier (180 meV) which inhibits the luminescence in the diode-like configuration at temperatures below 200 K.

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Section: Resultssupporting

confidence: 81%

Section: Introductionmentioning

confidence: 99%

Optical characterization of radiative deep centres in 6H–SiC junction field effect transistors

Pavesi

Manfredi

Rigolli

et al. 2003

Semicond. Sci. Technol.

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“…15 Before introduction into the UHV chamber, the samples were degreased and cleaned according to the RCA procedure, 16 followed by oxide removal in a 7:1 NH 4 F:HF solution ͑ϳ15 min͒ and rinsing in highpurity de-ionized water. The crystals were sublimation etched in order to remove surface damage resulting from the polishing process.…”

Section: Methodsmentioning

confidence: 99%

Scanning tunneling microscopy study of SiC(0001) surface reconstructions

Owman¹

1996

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Hydrogen-induced reconstruction of the GaP(001) surface studied by scanning tunneling microscopy Scanning tunneling microscopy has been used to study the reconstructions of Si-terminated SiC͑0001͒ surfaces observed after heat treatment at increasing temperatures. For the )ϫ) reconstruction, obtained by heating at temperatures around 950°C, the images can be explained by a model composed of 1/3 monolayer of Si or C adatoms in threefold symmetric sites on top of the outermost Si-C bilayer. For surfaces heated above 1050°C the images show growing fractions of quasiperiodic 6ϫ6 and 5ϫ5 reconstructions. Heating above 1250°C results in a partial graphitization of the surface which modifies the observed 6ϫ6 structure.

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Removal of polishing-induced damage from 6H-SiC(0001) substrates by hydrogen etching

Owman

Hallin

Mårtensson

et al. 1996

Journal of Crystal Growth

122

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Fabrication of SiC epitaxial structures for devices by the method of sublimation in an open system

Cited by 27 publications

References 0 publications

Optical characterization of radiative deep centres in 6H–SiC junction field effect transistors

Optical characterization of radiative deep centres in 6H–SiC junction field effect transistors

Scanning tunneling microscopy study of SiC(0001) surface reconstructions

Removal of polishing-induced damage from 6H-SiC(0001) substrates by hydrogen etching

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