Removal of polishing-induced damage from 6H-SiC(0001) substrates by hydrogen etching

Owman, Fredrik; Hallin, Christer; Mårtensson, Per; Janzén, Erik

doi:10.1016/0022-0248(96)00296-5

Cited by 122 publications

(74 citation statements)

References 11 publications

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“…We discuss in this section the underlying mechanisms behind these phenomena. Prior work has focused primarily on the Si-face, and our experimental results are generally in good accordance with those works [4][5][6][7][8][9][10][11]. The Cface has been less well explored, with our observations providing significant new insight into that surface.…”

Section: Discussionsupporting

confidence: 85%

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Step formation on hydrogen-etched 6H-SiC{0001} surfaces

et al. 2008

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Section: Discussionsupporting

confidence: 85%

“…High temperature etching in gaseous environments of H 2 [2,4,5,6,7,8] or mixed H 2 and HCl [9,10,11] removes surface scratches effectively and generates atomically smooth surfaces.…”

Section: Introductionmentioning

confidence: 99%

Step formation on hydrogen-etched 6H-SiC{0001} surfaces

et al. 2008

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“…1(a) and 1(b), the step height is 1.0 and 1.5 nm in 4H-SiC and 6H-SiC, respectively (see the figure insets), corresponding to the height of one-unit cell in each polytype. This is due to step bunching, which has been reported by several authors [15,18,20].…”

supporting

confidence: 55%

Self-Ordering of Nanofacets on Vicinal SiC Surfaces

2003

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Vicinal 4H and 6H-SiC 0001 surfaces have been investigated using atomic force microscopy and cross-sectional high-resolution transmission electron microscopy. We observed the characteristic selfordering of nanofacets on any surface, regardless of polytypes and vicinal angles, after gas etching at high temperature. Two facet planes are typically revealed: (0001) and high index 112n that are induced by equilibrium surface phase separation. A 112n plane may have a free energy minimum due to attractive step-step interactions. The differing ordering distances in 4H and 6H polytypes imply the existence of SiC polytypic dependence on nanofaceting. Thus, it should be possible to control SiC surface nanostructures by selecting a polytype, a vicinal angle, and an etching temperature.

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“…As-received SiC-6H (supplied by Sterling Semiconductor) contains the distribution of low angle grain boundaries, scratches and polishing-induced damages that may lead the growth of GaN layer on these substrates to a high density of defects and stacking mismatch boundaries. Prior to loading the substrates into the growth chamber it is indispensible to remove the polishing-induced defects by proper etching treatments either by chemical [7] or H 2 etching [8] at high temperatures. The samples were degreased and chemically cleaned in a solution of H 2 SO 4 : H 2 O 2 (4 : 1) for about 20 minutes at 175 C to remove the polishing residues and dipped in HF solution for 5 minutes to reduce the native oxide surface contamination.…”

Section: Methodsmentioning

confidence: 99%

Growth of Strain Free GaN Layers on 6H‐SiC (0001) by Plasma‐Assisted Molecular Beam Epitaxy

Jeganathan¹,

Shimizu²,

Okumura³

2002

phys. stat. sol. (c)

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The strain state of the GaN/6H-SiC (0001) heterostructure is shown to depend on the AlN nucleation layer thickness and growth process. Using identical GaN growth conditions with different AlN buffer layer thickness, the GaN layers were found to be under different strain in the plane normal to the growth direction. The accomplishment of double-step AlN buffer (150 nm) grown at two different temperatures with a difference of 30-50 C has lead into strain free growth of 1.2 mm thick GaN layers with improved structural and optical characteristics. The unstrained nature of the GaN layers was found from the lattice constants (a ¼ 0.3191 nm and c ¼ 0.5186 nm) of the GaN layer measured from the X-ray diffraction space mapping. Post growth cooling introduced tensile strain in the GaN layer is ineffective when nucleated on the double-step AlN buffer layers, whereas the compressive and tensile strain remains in the GaN layers when nucleated on the single-step thin AlN buffer layer and directly on SiC, respectively.

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Removal of polishing-induced damage from 6H-SiC(0001) substrates by hydrogen etching

Cited by 122 publications

References 11 publications

Step formation on hydrogen-etched 6H-SiC{0001} surfaces

Step formation on hydrogen-etched 6H-SiC{0001} surfaces

Self-Ordering of Nanofacets on Vicinal SiC Surfaces

Growth of Strain Free GaN Layers on 6H‐SiC (0001) by Plasma‐Assisted Molecular Beam Epitaxy

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