Fabrication of Si heterojunction solar cells using P-doped Si nanocrystals embedded in SiN
                x
               films as emitters

Wu, Ping-Jung; Wang, Yu-Cian; Chen, I-Chen

doi:10.1186/1556-276x-8-457

Cited by 20 publications

(3 citation statements)

References 25 publications

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“…They obtained the Si NCs/SiC multilayers after high temperature annealing. The PCE of the solar cells reached 4.66% and the IQE at 400 nm was 35% which is higher than traditional c-Si cells [76] . Wu et al fabricated the P doped Si rich SiN films by ECR-CVD and obtained Si NCs embedded in SiN x after annealing.…”

Section: Photovoltaic Devicesmentioning

confidence: 69%

Si nanocrystals-based multilayers for luminescent and photovoltaic device applications

Lü

Cao

et al. 2018

J. Semicond.

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Low dimensional Si materials have attracted much attention because they can be developed in many kinds of new-generation nano-electronic and optoelectronic devices, among which Si nanocrystals-based multilayered material is one of the most promising candidates and has been extensively studied. By using multilayered structures, the size and distribution of nanocrystals as well as the barrier thickness between two adjacent Si nanocrystal layers can be well controlled, which is beneficial to the device applications. This paper presents an overview of the fabrication and device applications of Si nanocrystals, especially in luminescent and photovoltaic devices. We first introduce the fabrication methods of Si nanocrystals-based multilayers. Then, we systematically review the utilization of Si nanocrystals in luminescent and photovoltaic devices. Finally, some expectations for further development of the Si nanocrystals-based photonic and photovoltaic devices are proposed.

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Section: Photovoltaic Devicesmentioning

confidence: 69%

Si nanocrystals-based multilayers for luminescent and photovoltaic device applications

Lü

Cao

et al. 2018

J. Semicond.

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“…Most of the recent studies have focused on Si QDs embedded in SiO 2 or Si 3 N 4 matrix. [2][3][4] In comparison with SiO 2 and Si 3 N 4 , SiC matrix is conductive to carrier transport because of lower barrier height between neighboring Si QDs. 5 In the previous research, Si QDs embedded in a SiC matrix can be formed by magnetron co-sputtering, with subsequent high temperature thermal annealing.…”

Section: Introductionmentioning

confidence: 99%

Fabrication and characterization of high density silicon quantum dots in gradient Si-rich carbide films

Chen

2014

Mod. Phys. Lett. B

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Gradient Si-rich carbide (GSRC) thin films were deposited on monocrystalline silicon wafers and quartz substrates by magnetron co-sputtering, with subsequent thermal annealing by rapid thermal processing. Fourier transform infrared spectroscopy, Raman spectroscopy, grazing incident X-ray diffraction, transmission electron microscope, and Hall measurements were used to analyze the microstructure and conductivity of the films. It was observed that bonding configurations, microstructure and conductivity properties changes with the annealing temperature from 700 • C to 1000 • C. The experimental results demonstrate that Si QDs with crystal volume fraction of 72.5%, average size of 4.5 nm, and number density of ∼ 2 × 10 12 cm −2 embedded in the amorphous SiC matrix can be formed using a GSRC multilayer structure, with subsequent annealing at 1000 • C. The 1000 • C annealed thin film possesses a conductivity of ∼ 5 S · cm −1 , which can be attributed to high carrier transport efficiency caused by high Si QD density.

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“…The modifications of SMOs with suitable dielectric materials maximize the chemical passivation between electron and hole by dropping down the density of states, which lowers the chance of recombination of photo-excited electrons. [23][24][25][26] This concept has led to the fabrication of silicon nanocrystals by embedding them into the dielectric matrix. 23 The dielectric material also provides passivation utilizing high field-effect through the highly-dense quality of intrinsically fixed charges.…”

mentioning

confidence: 99%

Blending of Dielectric Perovskite with Electron Transport Materials: A Case Study towards Improving Bio-Molecular Devices for Energy Harvest

Dey

Datta

Moyez

et al. 2021

ECS J. Solid State Sci. Technol.

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In the present work, the photovoltaic performance changes of organic dye anchored anatase TiO2 based photo-anode after incorporating dielectric material PLT15 (Pb0.85La0.15TiO3) in the TiO2 matrix were studied for DSSC application. The TiO2 and PLT15 modified TiO2 were prepared through a wet chemical process and the crystalline nature, morphological features, and optical properties were studied via XRD, SEM, and Uv–vis analysis, respectively. A few notable changes in the morphology and UV–vis absorption characteristics were observed when TiO2 was modified with PLT15. The hypsochromic shift in the UV–vis absorption spectrum was identified after the modification of TiO2 with PLT15. The estimated bandgap for the PLT15 modified TiO2 was found lower than the primitive TiO2, which shows the lowering of density of states after modification. DSSCs were prepared by anchoring two different natural biomolecule-based organic dyes originating from chlorophyll and carotene were used as a sensitizer for TiO2 and PLT15 modified TiO2 photoanodes. It was observed that extracted chlorophyll dye shows comparatively broader absorption than carotene under visible light and exhibits higher photo-conversion efficiency of DSSC. Furthermore, the modification of TiO2 with dielectric material (PLT15) improves the photoconversion efficiency than the primitive one. This present work provides a comprehensive insight to the researchers regarding the use of dielectric modified semiconducting metal oxide-based photoanodes for bio-molecular devices for energy harvest.

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Fabrication of Si heterojunction solar cells using P-doped Si nanocrystals embedded in SiN x films as emitters

Cited by 20 publications

References 25 publications

Si nanocrystals-based multilayers for luminescent and photovoltaic device applications

Si nanocrystals-based multilayers for luminescent and photovoltaic device applications

Fabrication and characterization of high density silicon quantum dots in gradient Si-rich carbide films

Blending of Dielectric Perovskite with Electron Transport Materials: A Case Study towards Improving Bio-Molecular Devices for Energy Harvest

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