Fabrication of Poly (methyl methacrylate) and Poly(vinyl alcohol) Thin Film Capacitors on Flexible Substrates

Salim, Bindu; Knj, Jaisree Meenaa Pria; Alagappan, M.; Kandaswamy, A.

doi:10.1088/1757-899x/99/1/012026

Cited by 8 publications

(9 citation statements)

References 4 publications

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“…No change in electronic properties and the doping effect in graphene by DUV irradiation were observed for the device coated with a thick PMMA layer. As previously reported, the transmission of light through the PMMA layer decreases when the thickness of the film is increased [42,43]. The results showed that the DUV light was absorbed into the thick PMMA layer, and the graphene underneath was not influenced the DUV light irradiation.…”

Section: Resultssupporting

confidence: 70%

“…Furthermore, the effect of DUV light irradiation on graphene, covered with PMMA, was investigated by assessing the transfer characteristics of the device for different DUV treatment times, as shown in Figure 6. The graphene (sample-6) was coated with PMMA with a thickness of 1274 nm and a controlled spin-coating speed of 4000 rpm [40][41][42][43]. The device was then exposed to DUV irradiation for different time intervals and transfer characteristics of the device were studied, as shown in Figure 6a.…”

Section: Resultsmentioning

confidence: 99%

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Deep-Ultraviolet (DUV)-Induced Doping in Single Channel Graphene for Pn-Junction

et al. 2021

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The electronic properties of single-layer, CVD-grown graphene were modulated by deep ultraviolet (DUV) light irradiation in different radiation environments. The graphene field-effect transistors (GFETs), exposed to DUV in air and pure O2, exhibited p-type doping behavior, whereas those exposed in vacuum and pure N2 gas showed n-type doping. The degree of doping increased with DUV exposure time. However, n-type doping by DUV in vacuum reached saturation after 60 min of DUV irradiation. The p-type doping by DUV in air was observed to be quite stable over a long period in a laboratory environment and at higher temperatures, with little change in charge carrier mobility. The p-doping in pure O2 showed ~15% de-doping over 4 months. The n-type doping in pure N2 exhibited a high doping effect but was highly unstable over time in a laboratory environment, with very marked de-doping towards a pristine condition. A lateral pn-junction of graphene was successfully implemented by controlling the radiation environment of the DUV. First, graphene was doped to n-type by DUV in vacuum. Then the n-type graphene was converted to p-type by exposure again to DUV in air. The n-type region of the pn-junction was protected from DUV by a thick double-coated PMMA layer. The photocurrent response as a function of Vg was investigated to study possible applications in optoelectronics.

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Section: Resultssupporting

confidence: 70%

Section: Resultsmentioning

confidence: 99%

Deep-Ultraviolet (DUV)-Induced Doping in Single Channel Graphene for Pn-Junction

et al. 2021

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Section: Resultsmentioning

confidence: 99%

“…The AFM images of PMMA film show some bright and dark spots which correspond to sharp peaks and dips in the polymer films which decreases with increasing dipolar moment of the solvents. [36] Although the surface morphology of PMMA films do not show a significant variation with changing molecular weight and the polarity of the solvents, the morphology of pentacene films deposited on the same, show considerable variation in their dendritic growth. In order to improve OFET performance, a smooth dielectric film with reduced number of polar functional groups which means reduced density of surface trap states, is the prerequisite to improve semiconductor film growth.…”

Section: Studies On Surface Energy Morphology and Capacitancementioning

confidence: 99%

Influence of Polymer Gate Dielectric on Organic Field‐Effect Transistors: Interdependence of Molecular Weight, Solvent Polarity, and Surface Energy—A Case Study with PMMA and Pentacene

Rajeev

Pillai

Nunzi

et al. 2021

Macro Materials & Eng

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The semiconductor/dielectric interface controls the performance of organic field-effect transistors (OFETs). Herein, the influence of both the molecular weight and the polarity of the solvent of a poly(methyl methacrylate) (PMMA)-based gate dielectric on the performance of pentacene OFETs is systematically investigated, by studying surface energy, surface roughness, morphology, leakage current, and capacitance of the dielectric. Various existing views on the role of the surface energy are considered while deriving a correlation. Larger pentacene grains are observed when the film is grown on high molecular weight-PMMA films cast from high dipole moment-solvent. The electrical properties of the corresponding OFETs show great improvement compared to those of OFETs fabricated with low molecular weight-PMMA film as the gate dielectric, irrespective of the solvent. The authors attribute this enhanced performance to the increased surface energy of the polymeric dielectric which turns out to be a strong function of its molecular weight and the dipole moment of the solvent. Bias-stress measurements on the OFETs confirm this correlation.

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“…Poly(vinyl alcohol) (PVA, M w 31 000–50 000. Sigma-Aldrich) films, 50 nm thick, with homogenously dispersed MPWs were prepared for characterization on a plasma-cleaned SiO 2 /Si substrate …”

Section: Resultsmentioning

confidence: 99%

DNA Origami Chromophore Scaffold Exploiting HomoFRET Energy Transport to Create Molecular Photonic Wires

Klein

Rolczynski

Oliver

et al. 2020

ACS Appl. Nano Mater.

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DNA-scaffolded molecular photonic wires (MPWs) displaying prearranged donor–acceptor chromophore pairs that engage in extended Förster resonance energy transfer (FRET) cascades represent an emerging nanoscale photonic material with numerous potential applications in data storage, encryption, and communications. For translation to such applications, these devices must first demonstrate robust performance with high transfer efficiencies over extended distances. Here, we report the optimization of FRET in a 6-helix DNA origami architecture supporting a 14-dye site system that contains a central 10-dye homogeneous FRET (HomoFRET) relay span and overall extends over 29 nm in length. Varying the dye density by controlling their presence or absence across all of the individually addressable sites presented an incredibly large optimization space (1024 HomoFRET and 16 384 total permutations). High-throughput experiments, with over 500 measurements of DNA templates assembled in parallel, allowed for the study of HomoFRET transfer as a function of fluorophore density and arrangement. Transfer within solution-phase MPWs initially obtained with steady-state spectroscopy experiments revealed values only reaching ∼1% efficiency. Extensive photophysical characterization, utilizing six different spectroscopic techniques and 11 total methodologies, determined that the diminished FRET efficiency of each individual component step is the principal cause of the limited transfer in solution. Monte Carlo and machine-learning methods provided additional insights into design optimization. A representative MPW set selected based on the previous findings was subsequently characterized in film deposition and also under cryogenic conditions. Under these improved conditions, selected MPWs demonstrated 59 ± 6% energy transport efficiency over a length of 29 nm; this is ∼25% longer and 10-fold more efficient than the previously reported optimized DNA MPWs.

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Fabrication of Poly (methyl methacrylate) and Poly(vinyl alcohol) Thin Film Capacitors on Flexible Substrates

Cited by 8 publications

References 4 publications

Deep-Ultraviolet (DUV)-Induced Doping in Single Channel Graphene for Pn-Junction

Deep-Ultraviolet (DUV)-Induced Doping in Single Channel Graphene for Pn-Junction

Influence of Polymer Gate Dielectric on Organic Field‐Effect Transistors: Interdependence of Molecular Weight, Solvent Polarity, and Surface Energy—A Case Study with PMMA and Pentacene

DNA Origami Chromophore Scaffold Exploiting HomoFRET Energy Transport to Create Molecular Photonic Wires

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