2017
DOI: 10.1039/c7ra03733c
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Fabrication of periodic arrays of needle-like Si nanowires on (001)Si and their enhanced field emission characteristics

Abstract: We report here the fabrication and field emission properties of highly-ordered, vertically-aligned tapered Si nanostructure arrays on (001)Si.

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Cited by 13 publications
(11 citation statements)
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“…By adopting the anisotropic, isotropic RIE or both with SiO 2 masks, the top of the Si nanopillars is etched faster than the bottom side resulting in the narrowed tip of the structures ( Figure 3 c,d) [ 70 ]. Besides, Cheng et al successfully produced the needle-like Si nanowires on Si(001) substrate by introducing multiple Ag-nanoparticle catalytic etching/removal (ACER) cycle process [ 71 ]. Unlike the tapering method on Si substrate, a different tapering technique was proposed using Ti/Cr/Ti hybrid mask for sacrificial etching to create tapered nanowires on a GaAs substrate [ 72 ].…”
Section: Fabrication Techniquesmentioning
confidence: 99%
“…By adopting the anisotropic, isotropic RIE or both with SiO 2 masks, the top of the Si nanopillars is etched faster than the bottom side resulting in the narrowed tip of the structures ( Figure 3 c,d) [ 70 ]. Besides, Cheng et al successfully produced the needle-like Si nanowires on Si(001) substrate by introducing multiple Ag-nanoparticle catalytic etching/removal (ACER) cycle process [ 71 ]. Unlike the tapering method on Si substrate, a different tapering technique was proposed using Ti/Cr/Ti hybrid mask for sacrificial etching to create tapered nanowires on a GaAs substrate [ 72 ].…”
Section: Fabrication Techniquesmentioning
confidence: 99%
“…As shown in Fig. 1(b), the ACE processes are performed with these MACE-fabricated Si nanowires to make the nanowires having pencil-like sharpened tip ends for their enhanced light trapping 3,6,2224 . The ACE process involves reduction of Ag ions (Eq.…”
Section: Resultsmentioning
confidence: 99%
“…3) and oxidation and etching of Si atoms (Eqs. 4 and 5) and these redox reactions are proceeded selectively on reactive Si atoms of sharp edges or Si nano-sized grains of the nanowires 8,18,22 . Ag nanoparticles are grown on the Si nanowire surface during the reduction and completely removed from the Si surface completely in the HNO 3 solution.…”
Section: Resultsmentioning
confidence: 99%
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