Fabrication of PbTiO₃/Pt/Yttria Stabilized ZrO₂ Heteroepitaxial Films on Si Substrate

Abstract

Fabrication of PbTiO3/Pt/yttria-stabilized ZrO2(YSZ) heteroepitaxial films on Si substrate was investigated with the aim of applying them to electric devices such as integrated infrared sensors and ferroelectric random-access memories (FRAMs). First, a (100)YSZ buffer layer was epitaxially grown on a (100)Si substrate using reactive electron-beam evaporation. In this process, a metallic Zr film was deposited before YSZ deposition in order to prevent a Si substrate surface from oxidizing. Then, Pt film was sputtered on the buffer layer. A rough YSZ surface attained by slightly etching the Si substrate surface is found to be essential to obtain (100)-oriented Pt films, while (111)-oriented Pt films were obtained on a smooth YSZ surface. This indicates that we can control the orientation of Pt film by controlling the morphology of the YSZ surface. Lastly, a (001)-oriented PbTiO3 film was epitaxially grown on (100)Pt/(100)YSZ/(100)Si using metalorganic chemical vapor deposition (MOCVD).

Deposition of yttria-stabilized zirconia thin films by atomic layer epitaxy from β-diketonate and organometallic precursors

“…The cubic form of ZrO 2 thin films is usually stabilised by adding other oxides, typically Y 2 O 3 , but Sc 2 O 3 , 1 CaO, 2 CeO 2 , [3][4][5] In 2 O 3 , 6 Gd 2 O 3 , 7 MgO, 2,7 Al 2 O 3 1,8 and MgAlO 3 9 have also been used. YSZ has been used as a buffer layer for high-T c superconducting, [10][11][12] ferroelectric [13][14][15] and pyroelectric 16 films as well as for protective coatings on YBa 2 Cu 3 O 72d . 17 It has also been studied for field effect transistor (FET) type oxygen sensors.…”

“…29 Both physical and chemical gas phase techniques as well as sol-gel 30,31 processes have been applied for the deposition of YSZ thin films. Physical vapor deposition methods such as electron beam evaporation, 15,32 sputtering [33][34][35] and pulsed laser deposition [36][37][38] have been frequently used. Chemical vapor deposition (CVD) methods include spray pyrolysis, [39][40][41] electrochemical vapor deposition 42 as well as conventional, 43 aerosol 44 and plasma assisted CVD.…”

Epitaxial films of metals from the platinum group (Ir, Rh, Pt and Ru) on YSZ-buffered Si(111)

“…They allow to distinguish between purely fibre textured layers, layers with several orientational variants and films with only one epitaxial texture component. As observed in former studies by other groups, (111)-oriented metal films are frequently composed of two or more texture components (twins) which are rotated azimuthally against each other [26,[30][31][32].…”

“…(111)-oriented metal films are still predominantly grown on oxide single crystals [21][22][23][24][25]. Attempts of Okamoto et al [26] and Tokita et al [27] to use YSZ/Si(0 0 1) as substrate for the growth of Pt(111) yielded films with four equivalent texture variants.…”

Epitaxial Growth of SrRuO3Thin Film Electrode on Si by Pulsed Laser Deposition

“…11) As a reference, their data are displayed in Table II. In addition, Lander and Morrison suggested that the reaction of 2Si + O 2 → 2SiO↑ (2) occurs in the Si etching region, which includes the condition of P B = 5 × 10 −7 Torr and T s = 700 • C. 23,24) The summation of 2 × (1) and (2) results in the following equation of…”