Fabrication of Ni-silicide/Si heterostructured nanowire arrays by glancing angle deposition and solid state reaction

Hsu, Hsun-Feng; Huang, Wan‐Ru; Chen, Ting‐Hsuan; Wu, Hwang-Yuan

doi:10.1186/1556-276x-8-224

Cited by 12 publications

(12 citation statements)

References 26 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In the process, as shown in Figure 8 a, SiH 4 molecules arrive on the Ni nanoparticle surfaces and are catalytically decomposed by the catalyst particles which results in forming of a Si layer on the Ni nanoparticles [ 39 ]. Owing to the fast diffusivity of Ni in Si, the formation of NiSi alloys is induced following a solid-state silicide reaction at a substrate temperature above 350 °C [ 40 ]. The spontaneous diffusion of Ni into the deposited Si layer could lead to the elongation of NiSi crystals as well as nanowires as reported in the literature [ 41 ].…”

Section: Resultsmentioning

confidence: 99%

Solid-State Limited Nucleation of NiSi/SiC Core-Shell Nanowires by Hot-Wire Chemical Vapor Deposition

et al. 2019

View full text Add to dashboard Cite

This work demonstrated a growth of well-aligned NiSi/SiC core-shell nanowires by a one-step process of hot-wire chemical vapor deposition on Ni-coated crystal silicon substrates at different thicknesses. The NiSi nanoparticles (60 to 207 nm) acted as nano-templates to initially inducing the growth of these core-shell nanowires. These core-shell nanowires were structured by single crystalline NiSi and amorphous SiC as the cores and shells of the nanowires, respectively. It is proposed that the precipitation of the NiSi/SiC are followed according to the nucleation limited silicide reaction and the surface-migration respectively for these core-shell nanowires. The electrical performance of the grown NiSi/SiC core-shell nanowires was characterized by the conducting AFM and it is found that the measured conductivities of the nanowires were higher than the reported works that might be enhanced by SiC shell layer on NiSi nanowires. The high conductivity of NiSi/SiC core-shell nanowires could potentially improve the electrical performance of the nanowires-based devices for harsh environment applications such as field effect transistors, field emitters, space sensors, and electrochemical devices.

show abstract

Section: Resultsmentioning

confidence: 99%

Solid-State Limited Nucleation of NiSi/SiC Core-Shell Nanowires by Hot-Wire Chemical Vapor Deposition

et al. 2019

View full text Add to dashboard Cite

show abstract

“…And temperature should be around 500°C during the deposition of the top Si layer so that Ni silicide layer could be intruded into the Si layer to develop the NWs. There are several reports on transition metal silicides which have attracted considerable attention in recent years because of their potential applications in silicon integrated circuits (Kim 2012;Hsu et al 2013;Beregovsky et al 2013;Andrew et al 2010). NiSi and CoSi 2 were emphasized more than other metal silicides due to their low mismatch with the Si lattice, low resistivity, and high thermal stability (Tinani et al 2001;Wu et al 1990).…”

Section: Resultsmentioning

confidence: 99%

“…At the temperatures above 700°C, the agglomeration of the NiSi NWs takes place and NiSi converts into NiSi 2 which shows the undesirable resistivity. Various NiSi NWs growth methods have been reported using chemical (Schmitt et al 2010;Kim 2012), physical , and posttreatment methods (Schmitt et al 2010;Hsu et al 2013). However, little attention has been paid for fundamental investigation regarding the initial stage of silicide formation.…”

Section: Introductionmentioning

confidence: 99%

Influence of temperature, metal layer, and groove angle in the nanowire growth: a prospective study on nickel silicide nanowires

2015

View full text Add to dashboard Cite

This work demonstrates the important factors to optimize the growth of nickel silicide (NiSi) nanowires (NWs). The samples were prepared at different deposition temperatures and characterized. Spontaneous reaction of metal and Si has been investigated for silicide formations. Metal diffusion is a crucial factor to form silicide phases and layer morphologies. The initial NiSi layer deposited under specific conditions induced fast NiSi NW growth rather than initial cobalt (Co) silicide layer. Ni is a faster diffuser rather than Si to produce NWs on Ni monosilicide template. The initial stage significantly affects silicide-formed grain sizes (180-368 nm). Thermal stability of the NWs was studied via postannealing process. Systematic demonstration has been performed by modulation of heating processes. We report that compressive stress is a driving force for the growth of NWs.

show abstract

“…Nevertheless, the NiSi phase is often accompanied by a Ni-rich phase that forms at lower temperatures [ 215 , 216 , 217 ]. Other crystallographic studies have shown the possibility of obtaining Ni-rich phases such as Ni 31 Si 12 and Ni 2 Si for temperatures between 400 and 450 °C [ 176 , 218 ].…”

Section: Technological Key Elements For Sinw-based Device Integrationmentioning

confidence: 99%

Functional Devices from Bottom-Up Silicon Nanowires: A Review

et al. 2022

View full text Add to dashboard Cite

This paper summarizes some of the essential aspects for the fabrication of functional devices from bottom-up silicon nanowires. In a first part, the different ways of exploiting nanowires in functional devices, from single nanowires to large assemblies of nanowires such as nanonets (two-dimensional arrays of randomly oriented nanowires), are briefly reviewed. Subsequently, the main properties of nanowires are discussed followed by those of nanonets that benefit from the large numbers of nanowires involved. After describing the main techniques used for the growth of nanowires, in the context of functional device fabrication, the different techniques used for nanowire manipulation are largely presented as they constitute one of the first fundamental steps that allows the nanowire positioning necessary to start the integration process. The advantages and disadvantages of each of these manipulation techniques are discussed. Then, the main families of nanowire-based transistors are presented; their most common integration routes and the electrical performance of the resulting devices are also presented and compared in order to highlight the relevance of these different geometries. Because they can be bottlenecks, the key technological elements necessary for the integration of silicon nanowires are detailed: the sintering technique, the importance of surface and interface engineering, and the key role of silicidation for good device performance. Finally the main application areas for these silicon nanowire devices are reviewed.

show abstract

Fabrication of Ni-silicide/Si heterostructured nanowire arrays by glancing angle deposition and solid state reaction

Cited by 12 publications

References 26 publications

Solid-State Limited Nucleation of NiSi/SiC Core-Shell Nanowires by Hot-Wire Chemical Vapor Deposition

Solid-State Limited Nucleation of NiSi/SiC Core-Shell Nanowires by Hot-Wire Chemical Vapor Deposition

Influence of temperature, metal layer, and groove angle in the nanowire growth: a prospective study on nickel silicide nanowires

Functional Devices from Bottom-Up Silicon Nanowires: A Review

Contact Info

Product

Resources

About