Fabrication of nanowires with high aspect ratios utilized by dry etching with SF6:C4F8 and self-limiting thermal oxidation on Si substrate

Park, Si Young; Giacomo, S.J. Di; Anisha, R.; Berger, Paul R.; Thompson, Phillip E.; Adesida, I.

doi:10.1116/1.3455498

Cited by 14 publications

(9 citation statements)

References 29 publications

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“…The subsequent DRIE of silicon cavities to the depth of 5 μ m, 7 μ m, and 10 μ m, respectively, was performed in a Plasma-Therm Versaline Inductively Coupled Plasma (ICP) by continuous processing with a gas mixture of SF 6 /C 4 F 8 /Ar. This process results in an anisotropic profile, while avoids scalloped sidewalls 58. The residual photoresist was removed in commercial solvents (NMP@75 C and PRS@75 C), followed by Piranha (H 2 SO 4 :H 2 O 2 ) solution.…”

Section: Methodsmentioning

confidence: 99%

Red blood cell dynamics in biomimetic microfluidic networks of pulmonary alveolar capillaries

et al. 2017

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The pulmonary capillary networks (PCNs) embody organ-specific microvasculatures, where blood vessels form dense meshes that maximize the surface area available for gas exchange in the lungs. With characteristic capillary lengths and diameters similar to the size of red blood cells (RBCs), seminal descriptions coined the term “sheet flow” nearly half a century ago to differentiate PCNs from the usual notion of Poiseuille flow in long straight tubes. Here, we revisit in true-scale experiments the original “sheet flow” model and devise for the first time biomimetic microfluidic platforms of organ-specific PCN structures perfused with RBC suspensions at near-physiological hematocrit levels. By implementing RBC tracking velocimetry, our measurements reveal a wide range of heterogonous RBC pathways that coexist synchronously within the PCN; a phenomenon that persists across the broad range of pressure drops and capillary segment sizes investigated. Interestingly, in spite of the intrinsic complexity of the PCN structure and the heterogeneity in RBC dynamics observed at the microscale, the macroscale bulk flow rate versus pressure drop relationship retains its linearity, where the hydrodynamic resistance of the PCN is to a first order captured by the characteristic capillary segment size. To the best of our knowledge, our in vitro efforts constitute a first, yet significant, step in exploring systematically the transport dynamics of blood in morphologically inspired capillary networks.

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Section: Methodsmentioning

confidence: 99%

Red blood cell dynamics in biomimetic microfluidic networks of pulmonary alveolar capillaries

et al. 2017

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“…Recently, there has been increasing interest in ZnO-based nanowire transistors fabricated by top-down approaches [ 17 - 19 ] as opposed to the more common bottom-up self-assembly approach [ 20 ]. The top-down approach involves material deposition and anisotropic plasma etching to create a nanowire.…”

Section: Introductionmentioning

confidence: 99%

Effect of atomic layer deposition temperature on the performance of top-down ZnO nanowire transistors

et al. 2014

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This paper studies the effect of atomic layer deposition (ALD) temperature on the performance of top-down ZnO nanowire transistors. Electrical characteristics are presented for 10-μm ZnO nanowire field-effect transistors (FETs) and for deposition temperatures in the range 120°C to 210°C. Well-behaved transistor output characteristics are obtained for all deposition temperatures. It is shown that the maximum field-effect mobility occurs for an ALD temperature of 190°C. This maximum field-effect mobility corresponds with a maximum Hall effect bulk mobility and with a ZnO film that is stoichiometric. The optimized transistors have a field-effect mobility of 10 cm2/V.s, which is approximately ten times higher than can typically be achieved in thin-film amorphous silicon transistors. Furthermore, simulations indicate that the drain current and field-effect mobility extraction are limited by the contact resistance. When the effects of contact resistance are de-embedded, a field-effect mobility of 129 cm2/V.s is obtained. This excellent result demonstrates the promise of top-down ZnO nanowire technology for a wide variety of applications such as high-performance thin-film electronics, flexible electronics, and biosensing.

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“…We evidenced that the deepest energy level is the point defect level HB2/HC2, which was detected in BSi-NWs and in standard Bosch-processed silicon substrate. We associated it to the defect VH 2 detected in low-energy H-ion-implanted Si. , We found also two broadened lines, HB1 in dry etched Si and HC1 in BSi-NWs, differing in activation enthalpy, capture cross section, and density. The zero-barrier analysis was successfully applied to fit both of the lines HB1 and HC1, allowing an assessment of their broadening quantitatively.…”

Section: Discussionmentioning

confidence: 85%

“…Literature reports − that the damage induced by RIE varies with the depth from the processed surface (Figure S1 in the SI). Thus, to compare the generation of deep levels during the BSi-NWs fabrication with the case when their growth was inhibited, the same region had to be probed by DLTS in samples B and C. To this aim, preliminary capacitance–voltage measurements were performed and the depletion depths versus applied voltages were plotted (Figure S4 in the SI).…”

Section: Resultsmentioning

confidence: 99%

Processing-Induced Electrically Active Defects in Black Silicon Nanowire Devices

Carapezzi

Castaldini

Mancarella

et al. 2016

ACS Appl. Mater. Interfaces

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Silicon nanowires (Si NWs) are widely investigated nowadays for implementation in advanced energy conversion and storage devices, as well as many other possible applications. Black silicon (BSi)-NWs are dry etched NWs that merge the advantages related to low-dimensionality with the special industrial appeal connected to deep reactive ion etching (RIE). In fact, RIE is a well established technique in microelectronics manufacturing. However, RIE processing could affect the electrical properties of BSi-NWs by introducing deep states into their forbidden gap. This work applies deep level transient spectroscopy (DLTS) to identify electrically active deep levels and the associated defects in dry etched Si NW arrays. Besides, the successful fitting of DLTS spectra of BSi-NWs-based Schottky barrier diodes is an experimental confirmation that the same theoretical framework of dynamic electronic behavior of deep levels applies in bulk as well as in low dimensional structures like NWs, when quantum confinement conditions do not occur. This has been validated for deep levels associated with simple pointlike defects as well as for deep levels associated with defects with richer structures, whose dynamic electronic behavior implies a more complex picture.

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Fabrication of nanowires with high aspect ratios utilized by dry etching with SF6:C4F8 and self-limiting thermal oxidation on Si substrate

Cited by 14 publications

References 29 publications

Red blood cell dynamics in biomimetic microfluidic networks of pulmonary alveolar capillaries

Red blood cell dynamics in biomimetic microfluidic networks of pulmonary alveolar capillaries

Effect of atomic layer deposition temperature on the performance of top-down ZnO nanowire transistors

Processing-Induced Electrically Active Defects in Black Silicon Nanowire Devices

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