Fabrication of nanostructured palladium-doped SiO2 films with variable temperature coefficient of resistivity

Ichinohe, Takahisa; Shimizu, Masaki; Uchida, Kazuo; Nozaki, Satoshi; Morisaki, Hiroshi

doi:10.1016/j.tsf.2004.01.097

Cited by 16 publications

(20 citation statements)

References 13 publications

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“…Electron conduction in Fermi glasses takes place by hopping. In the variable-range hopping (VRH) regime, the electrons hop between neighbors nearest (NN) in space, R, or in energy, W , within the optimum bandwidth E F ± W [19,[29][30][31][32][33][34][35], and hence the conductivity is proportional to the hopping probability as…”

Section: Conduction Mechanismsmentioning

confidence: 99%

Electronic structure and transport measurements of amorphous transition-metal oxides: observation of Fermi glass behavior

et al. 2012

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We characterized the conduction mechanisms in thin sputtered films of three representative binary Me-O (Me = Ta, W, and Nb) systems as a function of oxygen content, by combining in situ chemical state and electronic band structure studies from X-ray photoemission with temperature-dependent transport measurements. Despite certain differences, these amorphous films all displayed Fermi glass behavior following an oxidation-induced transition from metallic to hopping conduction, down to a sub-percolation threshold. The electron localization estimated from the band structure was in good agreement with that from the transport measurements, and the two were used to construct phase diagrams of conduction in the degree of oxidation-conductivity coordinates, which should prove important in the design of resistive switching and other electronic devices.

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Section: Conduction Mechanismsmentioning

confidence: 99%

Electronic structure and transport measurements of amorphous transition-metal oxides: observation of Fermi glass behavior

et al. 2012

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“…The author described that the origin of the phenomenon is associated with sd scattering 35 in alloys that contain a transition metal. Ichinohe et al 36 studied the resistivity of Pd nanocrystals embedded in SiO 2 films in the temperature range from 80 to 320 K. The authors varied the temperature coefficient of the resistivity by controlling the Pd content in the film, and adjusted the coefficient as low as 10 ¹4 K…”

Section: ¹1mentioning

confidence: 99%

Gold-nanoparticle Inks for Room-temperature Formation of Conductive Films

2012

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We show that aqueous inks containing Au nanocrystals that were slightly modified with mercaptosuccinic acid (MSA, IUPAC name: sulfanylsuccinic acid) turn into conductive films after being cured in room-temperature air. Because of the highly hydrophilic nature of MSA, the nanoparticles maintain good dispersion in water. The conductive film exhibits an electrical resistivity in the order of 10 ¹5 ³ cm, and its temperature coefficient in the range from 290 to 20 K was 7 © 10 ¹5

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“…Particle morphology and oxidation state can play an important role in defining the active sites in the Pd catalysts [47]. Pd is also an interesting material used in Granular Metal (GM) films, cermets, or nano-cermets, where metal particles are dispersed in an insulator [48,49]. The lower dimensional mesoscopic materials with tunnelling junctions have a negative coefficient of resistance, where the resistance increases with decreasing temperature.…”

Section: Palladium Propertiesmentioning

confidence: 99%

“…Pd does not dissolve Ge, and the solubility of Pd in Ge has not been studied [52]. Pd in SiO 2 has been studied by Ichinohe et al [48,49], who studied Pd doped SiO 2 films and found at small doses of Pd ultra fine particles of Pd 2 Si. Voogt et al [53] studied PdO particles with a metallic Pd core.…”

Section: Palladium Propertiesmentioning

confidence: 99%

Characterization of amorphous and crystalline silicon nanoclusters in ultra thin silica layers

Thøgersen

Mayandi

Finstad

et al. 2008

Journal of Applied Physics

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The nucleation and structure of silicon nanocrystals formed by different preparation conditions and silicon concentration (28 -70 area %) have been studied using Transmission Electron Microscopy (TEM), Energy Filtered TEM (EFTEM) and Secondary Ion Mass Spectroscopy (SIMS). The nanocrystals were formed after heat treatment at high temperature of a sputtered 10 nm thick silicon rich oxide on 3 nm SiO2 layer made by Rapid Thermal Oxidation (RTO) of silicon. Nanocrystals precipitate when the excess silicon concentration exceeds 50 area %. Below this percentage amorphous silicon nanoclusters were found. In-situ heat treatment of the samples in the TEM showed that the crystallization requires a temperature above 800 o C. The nanocrystals precipitate in a 4 nm band, 5 nm from the Si substrate and 4 nm from the SiO2 sample surface. The silicon nucleates where the excess Si concentration is the highest. The top surface has less excess Si due to reaction with oxygen from the ambient during annealing. The SiO2-RTO layer is more Si rich due to Si diffusion from the SiO2-Si layer into RTO. Twinning and stacking faults were found in nanocrystals with 4-10 nm in diameter. These types of defects may have large effects upon the usability of the material in electronic devices. Both single and double twin boundaries have been found in the nanocrystals by high resolution transmission electron microscopy (HRTEM). Image simulations were carried out in order to obtain more information about the defects and nanocrystals. The stacking faults are extrinsic and located in the twin boundaries.

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Fabrication of nanostructured palladium-doped SiO2 films with variable temperature coefficient of resistivity

Cited by 16 publications

References 13 publications

Electronic structure and transport measurements of amorphous transition-metal oxides: observation of Fermi glass behavior

Electronic structure and transport measurements of amorphous transition-metal oxides: observation of Fermi glass behavior

Gold-nanoparticle Inks for Room-temperature Formation of Conductive Films

Characterization of amorphous and crystalline silicon nanoclusters in ultra thin silica layers

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