Fabrication of nano-porous silicon using alkali etching process

Kashyout, Abd El-Hady B.; Soliman, Hesham M. A.; Nabil, Marwa; Bishara, A. A.

doi:10.1016/j.matlet.2012.12.107

Cited by 23 publications

(17 citation statements)

References 12 publications

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“…The presence of the Si-OH group is proof of bonded water. The very strong and broad FTIR band at 1082 cm −1 is usually assigned to Si-O-Si asymmetric stretching vibrations (Kashyout et al 2013), and (Kashyout et al 2018). The band at 789 cm −1 can be assigned to Si-O-Si symmetric stretching vibrations (Trivedi et al 2015), whereas the FTIR band at 470 cm −1 is due to O-Si-O bending vibrations (Hernández-Ortiz et al 2015).…”

Section: Resultsmentioning

confidence: 99%

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2019

AJS

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Section: Resultsmentioning

confidence: 99%

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2019

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“…General system descriptions: The various structures were prepared using electrochemical etching method. However, nanostructures can also 10,11 be achieved with only chemical etching, but with longer time, whereas electrochemical etching method requires less etching time. From our experiment, it is deduced that bigger pores could also be achieved with ordinary chemical etching, but chemical additives such as platinum are necessary to be added to the HF solution in order to enhance the etching potential.…”

Section: Methodsmentioning

confidence: 99%

Anti-Glare Coatings Based on Porous Silicon Structures

Iwe¹,

Gosteva²,

Старков³

et al. 2019

ES Mater.Manuf.

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Modern photovoltaic cells use conductive oxides or dielectric materials as antireflection coatings. Today, solar systems are the fastest growing energy generation systems due to the environmental concerns and increasing demand for a clean and renewable energy source. Silicon solar cells have dominated the current market of photovoltaic solar cells (PVs), accounting for over 95 % in the market. This is due to the abundance of raw materials (silicon), low cost, simple and cheap manufacturing technology. Despite its dominance, fabrication of silicon solar cells with a high conversion efficiency has been challenging due to high sunlight reflectance (over 35 %). Traditional techniques such as antireflection coating (ARC) and texturing have failed to provide a solution as they leave a large potential energy unused due to inefficient light harvesting in the near infrared spectrum. In this work, we varied the shape, height and width of the silicon surface structure to control the optical resonance and guide more light to the PV surface by bouncing the light around inside the PV cell, keeping the light in the cell longer and consequently increasing the chances of colliding with electrons. The surface reflection has been drastically reduced to almost zero using gradient porous silicon technique.

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“…In case of n-propanol addition to KOH etchant resulted in remarkable improvement of porosity morphology of (100) surfaces, which is produced by transformation from Si (211) plane to Si (100) plane, more than IPA addition [7]. Then, the regularity of porosity in silicon samples as a result of using n-propanol replaced of IPA (as shown in Figure 4), because of the differences in mechanism of anisotropic etching process of Si wafers.…”

Section: Etching Rates In Various Systemsmentioning

confidence: 99%

“…In this paper, porous silicon have been produced depending on our previous study [7], using alkali media that is preferable with respect to the disadvantages of using HF with its toxicity, corrosivity and hazardous to water. The main factors affecting the production of porous silicon from single crystal silicon as a result of anisotropic etching like concentration of etchant (KOH), concentration of wetting agent (Iso-propanol, n-propanol), temperature of etching process and time of etching are studied and investigated.…”

Section: Pore Shapementioning

confidence: 99%

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Fabrication of Congo Red/Oxidized Porous Silicon (CR/OPS) pH-Sensors

Kashyout¹,

Soliman²,

Nabil³

et al. 2013

MSA

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The fabrication of nano porous silicon, nPSi, using alkali etching process has been studied and carried out. The surface chemistry of anisotropic etching of n-type Si-wafer is reviewed and the anisotropic chemical etching of silicon in alkaline solution using wetting agents is discussed. Transformation of crystallographic plane of n-Si (211) to nPSi (100) has occurred on using n-propanol as wetting agent. The rate of pore formation was 0.02478 -0.02827 µm/min, which was heavily dependent upon the concentration of the etchant containing wetting agents, allowing patterned porous silicon formation through selective doping of the substrate. A particle size of 15 nm for porous nano-silicon was calculated from the XRD data. Porosity of PS layers is about 10%. Pore diameter and porous layer thickness are 0.0614 nm and 16 µm, respectively. The energy gap of the produced porous silicon is 3.3 eV. Furthermore, the combination of PS with Congo Red, which are nanostructured due to their deposition within the porous matrix is discussed. Such nano compounds offer broad avenue of new and interesting properties depending on the involved materials as well as on their morphology. Chemical route was utilized as the host material to achieve pores filling. They were impregnated with Congo Red, which gave good results for the porous silicon as a promising pH sensor.

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Fabrication of nano-porous silicon using alkali etching process

Cited by 23 publications

References 12 publications

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Anti-Glare Coatings Based on Porous Silicon Structures

Fabrication of Congo Red/Oxidized Porous Silicon (CR/OPS) pH-Sensors

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