“…Nanoantennas are attracting a lot of attention due to the progress in nanomanufacturing techniques . One of the novel techniques to realize nanoantennas at a nanoscale is to utilize nanoprobes (or ultrasharp tips) − that will be used to make physical contact with individual CNTs and form a nano-Schottky diode rectifier . Additionally, we have demonstrated the feasibility of designing an optical rectenna by engineering a rectifying diode at the interface between a metal nanoprobe of an atomic force microscope (AFM) and single-wall carbon nanotubes (SWCNTs) .…”
To optimize the performance
of carbon nanotube (CNT)-based rectennas,
we have studied the effect of metal work function on the photodetection
characteristics. Two materials of conducting nanoprobes, namely, gold
(Au) and platinum (Pt), have been used to form a rectifying diode
at the interface with the CNT. The electrical and optical characteristics
of single-wall carbon nanotubes (SWCNTs) dispersed on top of a SiO
2
/Si substrate have been investigated using a conductive mode
atomic force microscope (C-AFM). The I–V measurements performed
for both diodes have exhibited an explicit rectification behavior
with high sensitivity of a CNT-based rectenna to light. It has been
observed that the lower work function metal (Au) leads to a higher
on/off current ratio than the high work function metal (Pt). These
experimental observations will be explained using the material characterization
of the complete system along with representative energy-band diagrams.
“…Nanoantennas are attracting a lot of attention due to the progress in nanomanufacturing techniques . One of the novel techniques to realize nanoantennas at a nanoscale is to utilize nanoprobes (or ultrasharp tips) − that will be used to make physical contact with individual CNTs and form a nano-Schottky diode rectifier . Additionally, we have demonstrated the feasibility of designing an optical rectenna by engineering a rectifying diode at the interface between a metal nanoprobe of an atomic force microscope (AFM) and single-wall carbon nanotubes (SWCNTs) .…”
To optimize the performance
of carbon nanotube (CNT)-based rectennas,
we have studied the effect of metal work function on the photodetection
characteristics. Two materials of conducting nanoprobes, namely, gold
(Au) and platinum (Pt), have been used to form a rectifying diode
at the interface with the CNT. The electrical and optical characteristics
of single-wall carbon nanotubes (SWCNTs) dispersed on top of a SiO
2
/Si substrate have been investigated using a conductive mode
atomic force microscope (C-AFM). The I–V measurements performed
for both diodes have exhibited an explicit rectification behavior
with high sensitivity of a CNT-based rectenna to light. It has been
observed that the lower work function metal (Au) leads to a higher
on/off current ratio than the high work function metal (Pt). These
experimental observations will be explained using the material characterization
of the complete system along with representative energy-band diagrams.
“…8 we can conclude that the process of tunneling and the photo effect is repeatable and reproducible for the nano Schottky diode with different C-AFM tips radii at sub-50 nm range. This work will attract attention for further research on nano-Schottky based photo-devices using well defined nanotips 54 .Figure 8The stability and repeatable of the photo effect showing ( a ) temporal stability of 15 nm tip ( b ) temporal stability of 30 nm tip ( c ) the repeatability of 15 nm tip and ( d ) the repeatability of 30 nm tip radius.…”
Silicon (Si)-based photodetectors are appealing candidates due to their low cost and compatibility with the complementary metal oxide semiconductor (CMOS) technology. The nanoscale devices based on Si can contribute efficiently in the field of photodetectors. In this report, we investigate the photodetection capability of nano-Schottky junctions using gold (Au) coated conductive atomic force microscope (C-AFM) tips, and highly cleaned n-Si substrate interface. The Au nanotip/n-Si interface forms the proposed structure of a nano Schottky diode based photodetector. The electrical characteristics measured at the nanoscale junction with different Au nanotip radii show that the tunneling current increases with decreasing the tip radius. Moreover, the tunneling process and photodetection effects are discussed in terms of barrier width/height decrease at the tip-semiconductor interface due to the applied electric field as well as the generation of plasmon-induced hot-electron at the nanoparticle (i.e. C-AFM tip)/n-Si interface. Furthermore, the photodetection sensitivity is investigated and it is found to be higher for C-AFM tips with smaller radii. Moreover, this research will open a new path for the miniaturization of photodetectors with high sensitivity based on nano-Schottky interfaces.
“…As a result, the fabrication of such well-dened nanotips has received a lot of attention from researchers in this eld. [28][29][30] Earlier, we have shown the signicant effect of individual NPs deposited on a thin lm passivated n-Si substrate on the enhancement of the electric eld, and, in turn, on the reverse tunneling current through the nano-Schottky junction. 11 In this work, the effect of the charge trapped in the NP on the I-V characteristics of the nano Schottky junctions, formed between the NP and Si substrate, and the time evolution of the I-V curves during the charge decay is studied.…”
In this work, we investigate the time dependence of trapped charge in isolated gold nanoparticles (Au-NPS) dispersed on n-Si substrates, based on the electrical characteristics of nano metal–semiconductor junctions.
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