Fabrication of miniaturized high bandwidth dielectric resonator on patch (DRoP) antenna using high dielectric CaCu3Ti4O12 nanoparticles

Thiruramanathan, P.; Marikani, A.; Ravi, S.; Madhavan, D.

doi:10.1016/j.jallcom.2018.03.015

Cited by 26 publications

(7 citation statements)

References 54 publications

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“…SnS thin film is abundance in the earth's crust with an orthorhombic crystal structure. It has been reported to be of p type conductivity with a carrier concentration on the order of 10 16 cm -3 and hole mobility of 1.4 cm 2 V -1 s -1 [2].…”

mentioning

confidence: 99%

Tuning of SnS Thin Film Conductivity on Annealing in an Open Air Environment for Transistor Application

Daniel

Uno

Isah

et al. 2020

EEJP

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The study aimed at enhancement and optimisation of SnS conductivity via annealing for field effect transistor’s semiconductor channel layer application. Interstitials and vacancies in SnS films are known to cause carrier traps which limit charge carriers and hence limit the achievement of the threshold voltage for a field effect transistor operation. Tuning of SnS conductivity for transistor application is of emerging interest for novel device operation. SnS thin film semiconductors of 0.4 thickness were deposited using Aerosol assisted chemical vapour deposition and annealed in open air at annealing temperatures of150, 200, 250, 300 and 350 . Variation of the annealing temperature from 150 through 250 enhances the crystallinity of the annealed thin film samples by increasing the number of crystallites of the annealed films which is also buttress by the decreasing values of FWHM. However a further decrease in crystallite size at higher annealing temperature of 300 to 350 was observed which could be attributed to the fragmentation of clusters of crystallites at higher annealing temperature. Increase in annealing temperature increases grain size leading to the reduction in grain boundaries and potential barrier thereby changing the structure and phase of the films which in essence affects the electrical conductivity of the SnS thin films. The films annealed at 250 exhibited optimum conductivity. The average hall coefficients of the samples deposited at 150 to 250 were positive which indicates that the films annealed at this temperature range are of p type conduction while the average hall coefficients of the samples deposited at 300 and 350 were negative indicating that the films are of n type conduction. The conductivity change is essential for the use of SnS as a semiconductor channel layer especially in a field effect transistor where the device can be tuned to work as a p type or n type semiconductor channel layer.

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mentioning

confidence: 99%

Tuning of SnS Thin Film Conductivity on Annealing in an Open Air Environment for Transistor Application

Daniel

Uno

Isah

et al. 2020

EEJP

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“…Hence, this antenna can be suitably employed in X – band and C‐band frequency range. Thiruramanathan et al 16 developed patch antenna using combination of CaCu 3 Ti 4 O 12 and alumina ceramic and copper radiating element and achieved peak gain of 5.2 dB at 2.4 GHz. Our proposed antenna achieves maximum gain of 11 dB, which is 100% larger than existing antenna.…”

Section: Performance Comparison Of Proposed Antenna With Other Existing Antennamentioning

confidence: 99%

Multiband microstrip patch antenna using copper nano radiating element for X band and C band applications

Chinnagurusamy¹,

Perumalsamy²

2021

Int J Numerical Modelling

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Modern wireless applications necessitate compact handheld devices capable of operating at wide range of frequencies with minimum power. A suitable choice and size of the antenna play a role in reducing the power consumption of the transceivers. Microstrip antenna is usually preferred for such transceivers operating at microwave frequencies because of low profile and easy installation. In this paper, a design of microstrip patch antenna using copper nano material fabricated with sputtering process is proposed and analyzed by its performance. The thickness of the microstrip antenna is reduced by 50 times compared to the antenna fabricated using conventional etching process. The performance of the antenna is evaluated using the metrics of Return Loss, VSWR, and Radiation Pattern. The proposed antenna achieves a return loss of −20 dB at 2.4GHz. Further, the return loss is less than −10 dB for the frequencies ranging from 5 to 17 GHz. The maximum gain of 10 dB is achieved at 15.5 GHz.

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“…Advent of electroceramic compounds like CaCu 3 Ti 4 O 12 (CCTO) [1,2] with giant dielectric constant is a big boost in this field as it can allow miniaturization of capacitive components, thereby shrinking the size of electronic devices. The stunning dielectric features of this toxic free compound has already been tested for applications like multi-layer ceramic capacitors (MLCC) [3], microwave devices and antennas [4], gas and humidity sensor [5,6], supercapacitor [7,8] etc. Despite the advantage of unusually high dielectric constant (ε r ∼ 10 4 -10 5 ) of CCTO, a member of ACu 3 Ti 4 O 12 family having body centred cubic perovskite structure, it is always associated with considerably high dielectric tangent loss (tan δ > 0.05 at 1 kHz at room temperature) together with low breakdown voltage, which cast a shadow on its application in capacitor.…”

Section: Introductionmentioning

confidence: 99%

Processing of lanthanum doped CaCu3Ti4O12 electroceramics in molten eutectic mixture for low loss high dielectric materials

Sen¹

2020

PAC

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Giant dielectric material CaCu 3 Ti 4 O 12 (CCTO) has found widespread applications, but associated high dielectric loss is still a major concern. The decreasing of dielectric tangent loss (tan δ) via rare earth element doping has been proven to be effective strategy, but in most cases it involves complex and time consuming processing. In the present paper, a fast and facile process is reported for the synthesis of lanthanum doped CCTO powders (Ca 1-x La x Cu 3 Ti 4 O 12 where x = 0.0, 0.05 and 0.1) using molten eutectic mixture as the reaction medium. The obtained powders were pressed and finally sintered at 1050°C. La 3+ substitution at Ca 2+ site results in remarkable reduction in dielectric loss (tan δ < 0.03) at room temperature compared to the parent CCTO. The increased grain boundary resistance (R gb ) estimated from room temperature complex impedance plane plot (Z * ) for the doped ceramics is proposed to be the major cause for higher thermal stability of dielectric constant (ε r ) and remarkable reduction in tan δ at room temperature. Furthermore, the frequency and temperature stability of ε r and tan δ over wide ranges make the doped CCTO a promising candidate for high temperature ceramic capacitor application.

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Fabrication of miniaturized high bandwidth dielectric resonator on patch (DRoP) antenna using high dielectric CaCu3Ti4O12 nanoparticles

Cited by 26 publications

References 54 publications

Tuning of SnS Thin Film Conductivity on Annealing in an Open Air Environment for Transistor Application

Tuning of SnS Thin Film Conductivity on Annealing in an Open Air Environment for Transistor Application

Multiband microstrip patch antenna using copper nano radiating element for X band and C band applications

Processing of lanthanum doped CaCu3Ti4O12 electroceramics in molten eutectic mixture for low loss high dielectric materials

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