Fabrication of MAPbBr<sub>3</sub> Single Crystal p‐n Photodiode and n‐p‐n Phototriode for Sensitive Light Detection Application

Liang, Feng; Jiang, Jin He; Zhao, Yao Zu; Zhang, Zhi Xiang; Wu, Di; Zeng, Liaoyuan; Tsang, Yuen Hong; Luo, Lin‐Bao

doi:10.1002/adfm.202001033

Cited by 44 publications

(40 citation statements)

References 51 publications

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“…where ε 0 = 8.85 × 10 −12 pF m −1 is the vacuum permittivity [43], ε is the static dielectric constant which is taken as 16.73 for Cs 2 AgBiBr 6 [42], e is the the charge quantity and d is the film thickness. In consequence, the defect density of the device without and with UV treatment is calculated to be 8.97 × 10 16 and 3.33 × 10 16 cm −3 , respectively.…”

Section: Uv-induced Performance Improvement Of the Cs 2 Agbibr 6 -Based Photodetectorsmentioning

confidence: 99%

UV soaking for enhancing the photocurrent and response speed of Cs2AgBiBr6-based all-inorganic perovskite photodetectors

Yuan

Yan

et al. 2021

Sci. China Mater.

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The response speed of the reported Cs 2 AgBiBr 6based photodetectors exhibits a wide variation ranging from microseconds to nanoseconds, while the reason is still unclear. Apart from the conventional approaches such as reducing effective area, new regulating approaches for response speed improvement have rarely been reported. On the other hand, it is generally believed that ultraviolet (UV) light has negative impact on perovskite devices resulting in performance degradation. In this work, we demonstrated that the response speed of the photodetector with FTO/Cs 2 AgBiBr 6 /Au structure can be effectively regulated by utilizing UV light-soaking effect without reducing the device area. Particularly, the decay time is efficiently modulated from 30.1 µs to 340 ns. In addition, the −3 dB bandwidth of the device is extended from 5 to 20 kHz. It is worth mentioning that the light current is remarkably boosted by 15 times instead of any attenuation. Furthermore, we prove the universality of UV soaking treatment on Cs 2 AgBiBr 6 -based photodetectors with other all-inorganic structures, i.e., FTO/TiO 2 /Cs 2 AgBiBr 6 /Au, FTO/ Cs 2 AgBiBr 6 /TiO 2 /Au and FTO/TiO 2 /Cs 2 AgBiBr 6 /CuSCN/Au. Our results demonstrate a new method to improve the response speed and light current of Cs 2 AgBiBr 6 -based perovskite all-inorganic photodetectors.

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Section: Uv-induced Performance Improvement Of the Cs 2 Agbibr 6 -Based Photodetectorsmentioning

confidence: 99%

UV soaking for enhancing the photocurrent and response speed of Cs2AgBiBr6-based all-inorganic perovskite photodetectors

Yuan

Yan

et al. 2021

Sci. China Mater.

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“…The maximal photocurrent gain reaches up to 600, which is much higher than the BJTs prepared by other methods. [8,22]…”

Section: Introductionmentioning

confidence: 99%

Template‐Guided C8‐BTBT/MAPbBr₃/C8‐BTBT Heterostructures for Broadband Bipolar Phototransistors

Wang

Liu

et al. 2022

Adv Materials Inter

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edented impact on the electronic industry and on solid-state research in particular. [2] Usually, they are fabricated by connecting two p-n junction diodes in a back-to-back configuration and work as a critical component in some high-speed computers, modem communication, and power systems. [3] A typical BJT consists of emitter (E), base (B), and collector (C) regions. By replacing the middle contact (B) with a light beam, one can achieve photocurrent gain, which is called floating-base bipolar phototransistor. In such device, the asformed bipolar transistor is operated in a common-emitter mode with the base floated and collector negatively biased, presenting ultrasensitive photoelectric response to weak light intensity due to its additional internal gain to amplify the weak photo-induced current [4][5][6][7] and achieving a well-rounded performance in terms of gain, bandwidth, responsivity, quantum efficiency, and dark current noise. [8,9] In bulk semiconductors, p-n junctions are formed by carefully incorporating substitutional impurities. [10] Such techniques, nonetheless, are difficult to implement in nanostructured semiconductors. Besides, nanostructured semiconductor BJT devices are usually constructed by multiple transfer processes, which is both cumbersome and inefficient. [4,11] Because of its intrinsic lack of defects and grain boundaries, organic semiconductor crystal exhibits high transport efficiency and long exciton diffusion length and lifetime, which has drawn ever-increasing attention for photoelectric device applications, such as organic field effect transistors (OFETs), organic light-emitting diodes (OLEDs), and organic photovoltaic cells (OPVs). [12][13][14][15] However, the low drift velocity of carriers and high density of localized states have hindered the application of organic semiconductors in optoelectronics. [16,17] These shortcomings have been addressed through significant efforts, including coupling organic active crystals with other sensitive materials to form heterojunction. Perovskites containing methylammonium lead halide (MAPbX 3 , MA = CH 3 NH 3 + , X = Cl, Br, I) exhibit an ultra-ideal photoelectric response because of their direct bandgap, large absorption coefficient, and long lifetime of photocarriers, rendering them outstanding candidates as efficient phototransistor materials. [18,19] Besides, organic semiconductor crystals usually show a narrow, single-band response Bipolar junction transistor (BJT) has had an unprecedented impact on the electronic industry and helped to usher in the digital revolution prominently. However, the critical part of BJT, p-n junction, is formed by carefully incorporating substitutional impurities in traditional bulk semiconductors and it is difficult to implement in nanostructured device. In this work, a floating-base BJT device is demonstrated by growing C8-BTBT/MAPbBr 3 /C8-BTBT PNP heterostructure in liquid phase. Growth of two semiconductor microwires into a crisscross heterojunction is achieved through template-guided printing and antisol...

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“…Methylammonium lead bromine (MAPbBr 3 ) perovskite is a member of the hybrid lead halide perovskite family that holds particular interest because it exhibits higher moisture stability than MAPbI 3 , and a narrower band gap than MAPbCl 3 and therefore offers great potential for use in a wide variety of optoelectronic applications, such as solar cells − and high-sensitivity photodetectors. − Moreover, recent studies have demonstrated that MAPbBr 3 can exhibit unique optical nonlinearity and ferroelectric properties, which further extend the range of potential MAPbBr 3 applications. However, most studies have focused on the macroscopic properties of MAPbBr 3 perovskite materials and the properties of their corresponding optoelectronic devices, whereas detailed studies seeking to understand the molecular mechanisms responsible for these properties are rare.…”

Section: Introductionmentioning

confidence: 99%

Illumination-Induced Changes in Methylammonium Lead Bromine Perovskites. An In Situ ²H NMR Study

et al. 2021

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Methylammonium lead bromine (MAPbBr3) perovskites have shown great potential for a wide variety of optoelectronic applications. However, the structural and dynamic properties of MAPbBr3 have been typically probed in the absence of illumination. The present study addresses this issue by applying in situ solid-state 2H nuclear magnetic resonance (NMR) spectroscopy to investigate the rotational dynamics and orientations of MA cations in the different phase structures of MAPbBr3 in detail. The results indicate that the orientations of the MA cations in MAPbBr3 are widely distributed and that illumination induces changes in the rotational dynamics of the MA cations, while the apparent distribution of their orientations remains nearly unchanged. These results are expected to provide a useful viewpoint for understanding the molecular factors affecting the optoelectronic properties of MAPbBr3.

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Fabrication of MAPbBr₃ Single Crystal p‐n Photodiode and n‐p‐n Phototriode for Sensitive Light Detection Application

Cited by 44 publications

References 51 publications

UV soaking for enhancing the photocurrent and response speed of Cs2AgBiBr6-based all-inorganic perovskite photodetectors

UV soaking for enhancing the photocurrent and response speed of Cs2AgBiBr6-based all-inorganic perovskite photodetectors

Template‐Guided C8‐BTBT/MAPbBr₃/C8‐BTBT Heterostructures for Broadband Bipolar Phototransistors

Illumination-Induced Changes in Methylammonium Lead Bromine Perovskites. An In Situ ²H NMR Study

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Fabrication of MAPbBr3 Single Crystal p‐n Photodiode and n‐p‐n Phototriode for Sensitive Light Detection Application

Cited by 44 publications

References 51 publications

UV soaking for enhancing the photocurrent and response speed of Cs2AgBiBr6-based all-inorganic perovskite photodetectors

UV soaking for enhancing the photocurrent and response speed of Cs2AgBiBr6-based all-inorganic perovskite photodetectors

Template‐Guided C8‐BTBT/MAPbBr3/C8‐BTBT Heterostructures for Broadband Bipolar Phototransistors

Illumination-Induced Changes in Methylammonium Lead Bromine Perovskites. An In Situ 2H NMR Study

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Fabrication of MAPbBr₃ Single Crystal p‐n Photodiode and n‐p‐n Phototriode for Sensitive Light Detection Application

Template‐Guided C8‐BTBT/MAPbBr₃/C8‐BTBT Heterostructures for Broadband Bipolar Phototransistors

Illumination-Induced Changes in Methylammonium Lead Bromine Perovskites. An In Situ ²H NMR Study