Fabrication of Low-Dimension CdSe Structures by Atomic Layer Epitaxy

Mikhaevich, D. P.; Ezhovskii, Yu. K.

doi:10.1023/b:rjac.0000008283.91545.b7

Cited by 4 publications

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“…Another similar II-VI material, CdSe has been grown via ALE using cadmium and selenium elemental sources. 15 In this study, we detail the deposition of CdS via ALD on hydroxyl terminated surfaces of Si(100) or glass using DMCd and an in situ H 2 S source in an ALD flow reactor. In depth characterization of the growth rates of the films is performed, and DFT calculations are used to support observed growth rates.…”

Section: Introductionmentioning

confidence: 99%

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Atomic Layer Deposition of CdS Films

Bakke¹,

Jung²,

Tanskanen

et al. 2010

Chem. Mater.

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Pure, polycrystalline CdS deposited by atomic layer deposition (ALD) on Si(100) or glass using dimethyl cadmium and in situ generated H 2 S is investigated in detail. This ALD system follows saturation behavior typical of ALD systems, and the growth rate monotonically decreases with temperature from 100 °C-300 °C; by 400 °C linear growth rate behavior is no longer seen. The crystal structure as determined by X-ray diffraction and transmission electron microscopy gradually transitions from zincblende to wurtzite with increasing temperature until the film is primarily wurtzite by 400 °C. Further, the average grain size increases with temperature. Transmission electron microscopy images and selected area diffraction patterns confirm the presence of zincblende and wurtzite crystals because of stacking faults and demonstrate that {111} crystal planes are more oriented parallel to the substrate at lower temperatures. Ultraviolet-visible spectroscopy shows that the bandgap is 2.3-2.42 eV in the 100 °C-400 °C range with a slight increase occurring with temperature. The roughness of the films is found to increase both with temperature and cycle number as observed with atomic force microscopy and scanning electron microscopy. Density functional theory calculations were used to understand observations concerning the growth rate and the bandgap of the films deposited at different temperatures.

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Section: Introductionmentioning

confidence: 99%

“…The reaction mechanism was also studied in detail, and the results showed that the DMCd precursor etched the surface to release DMZn. Another similar II−VI material, CdSe has been grown via ALE using cadmium and selenium elemental sources …”

Section: Introductionmentioning

confidence: 99%

Atomic Layer Deposition of CdS Films

Bakke¹,

Jung²,

Tanskanen

et al. 2010

Chem. Mater.

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“…The growth of polymer films can occur linearly or exponentially [63]. The linear dependence of the thickness (optical density) on the number of layers is due to the constant amount of the electrolyte adsorbed in each step of the process.…”

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confidence: 99%

Properties of synthetic polyelectrolytes and prospects for their use for finishing of textile materials

2014

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The review covers the literature concerning modifi cation of textile material surfaces with synthetic polyelectrolytres and describes the nature of the polymers used and the character of their interaction with each other, with the fi ber, and with the functional substance. The main lines of modern studies dealing with the use of synthetic polyelectrolytes for electrostatic self-assembly of nanolayers on the surface of textile materials and for microencapsulation of functional (aromatizing) substances on a textile material are considered.

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Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process

Puurunen

2005

Journal of Applied Physics

2,399

2,197

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Atomic layer deposition (ALD), a chemical vapor deposition technique based on sequential self-terminating gas–solid reactions, has for about four decades been applied for manufacturing conformal inorganic material layers with thickness down to the nanometer range. Despite the numerous successful applications of material growth by ALD, many physicochemical processes that control ALD growth are not yet sufficiently understood. To increase understanding of ALD processes, overviews are needed not only of the existing ALD processes and their applications, but also of the knowledge of the surface chemistry of specific ALD processes. This work aims to start the overviews on specific ALD processes by reviewing the experimental information available on the surface chemistry of the trimethylaluminum/water process. This process is generally known as a rather ideal ALD process, and plenty of information is available on its surface chemistry. This in-depth summary of the surface chemistry of one representative ALD process aims also to provide a view on the current status of understanding the surface chemistry of ALD, in general. The review starts by describing the basic characteristics of ALD, discussing the history of ALD—including the question who made the first ALD experiments—and giving an overview of the two-reactant ALD processes investigated to date. Second, the basic concepts related to the surface chemistry of ALD are described from a generic viewpoint applicable to all ALD processes based on compound reactants. This description includes physicochemical requirements for self-terminating reactions, reaction kinetics, typical chemisorption mechanisms, factors causing saturation, reasons for growth of less than a monolayer per cycle, effect of the temperature and number of cycles on the growth per cycle (GPC), and the growth mode. A comparison is made of three models available for estimating the sterically allowed value of GPC in ALD. Third, the experimental information on the surface chemistry in the trimethylaluminum/water ALD process are reviewed using the concepts developed in the second part of this review. The results are reviewed critically, with an aim to combine the information obtained in different types of investigations, such as growth experiments on flat substrates and reaction chemistry investigation on high-surface-area materials. Although the surface chemistry of the trimethylaluminum/water ALD process is rather well understood, systematic investigations of the reaction kinetics and the growth mode on different substrates are still missing. The last part of the review is devoted to discussing issues which may hamper surface chemistry investigations of ALD, such as problematic historical assumptions, nonstandard terminology, and the effect of experimental conditions on the surface chemistry of ALD. I hope that this review can help the newcomer get acquainted with the exciting and challenging field of surface chemistry of ALD and can serve as a useful guide for the specialist towards the fifth decade of ALD research.

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Fabrication of Low-Dimension CdSe Structures by Atomic Layer Epitaxy

Cited by 4 publications

References 0 publications

Atomic Layer Deposition of CdS Films

Atomic Layer Deposition of CdS Films

Properties of synthetic polyelectrolytes and prospects for their use for finishing of textile materials

Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process

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