Atomic Layer Deposition of CdS Films

Bakke, Jonathan R.; Jung, Hee Joon; Tanskanen, Jukka T.; Sinclair, Robert; Bent, Stacey F.

doi:10.1021/cm100874f

Cited by 65 publications

(66 citation statements)

References 40 publications

(66 reference statements)

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“…Essentially, two growth regimes can be extracted from this plot. During the initial period lasting for ∼20 ALD cycles, the growth rate is ∼0.2 Å/cycle; after this incubation period, the growth rate is ∼1.3 Å/cycle, consistent with previous reports of steady‐state growth 29. The change of growth rate indicates that ALD CdS has different growth characteristics on different surfaces.…”

Section: Resultssupporting

confidence: 89%

Atomic Layer Deposition of CdS Quantum Dots for Solid‐State Quantum Dot Sensitized Solar Cells

Brennan

Ardalan

Lee

et al. 2011

Advanced Energy Materials

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Functioning quantum dot (QD) sensitized solar cells have been fabricated using the vacuum deposition technique atomic layer deposition (ALD). Utilizing the incubation period of CdS growth by ALD on TiO2, we are able to grow QDs of adjustable size which act as sensitizers for solid‐state QD‐sensitized solar cells (ssQDSSC). The size of QDs, studied with transmission electron microscopy (TEM), varied with the number of ALD cycles from 1‐10 nm. Photovoltaic devices with the QDs were fabricated and characterized using a ssQDSSC device architecture with 2,2',7,7'‐tetrakis‐(N,N‐di‐p methoxyphenylamine) 9,9'‐spirobifluorene (spiro‐OMeTAD) as the solid‐state hole conductor. The ALD approach described here can be applied to fabrication of quantum‐confined structures for a variety of applications, including solar electricity and solar fuels. Because ALD provides the ability to deposit many materials in very high aspect ratio substrates, this work introduces a strategy by which material and optical properties of QD sensitizers may be adjusted not only by the size of the particles but also in the future by the composition.

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Section: Resultssupporting

confidence: 89%

Atomic Layer Deposition of CdS Quantum Dots for Solid‐State Quantum Dot Sensitized Solar Cells

Brennan

Ardalan

Lee

et al. 2011

Advanced Energy Materials

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“…Although selflimiting behavior in the surface reactions was observed at several temperatures in this range, the growth per cycle profile is different from the traditional temperatureindependence of ALD growth. 25 A decrease of the ALD growth per cycle with increasing deposition temperature has been reported in SnS using 2, 3, 5, and to a lesser extent 4, as well as CdS, 33 ZnS, 34 In2S3, 35 PbS, 36 Ga2S3, 37 and GeS. 1 Previous explanations of decreasing growth per cycle have included entropy-driven decreases in chemisorbed metal precursor surface coverage (for CdS) 33 and changes in surface chemistry, including desorption of chemisorbed metal precursor (e.g., chemisorbed 4 by H2S for SnS).…”

Section: Scheme 1 Tin(ii) Precursorsmentioning

confidence: 95%

Atomic Layer Deposition of Tin Monosulfide Using Vapor from Liquid Bis(N,N′-diisopropylformamidinato)tin(II) and H₂S

Kim

Zhao

Davis

et al. 2019

ACS Appl. Mater. Interfaces

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The oxide and sulfide of divalent tin show considerable promise for sustainable thin-film optoelectronics, as transparent conducting and light absorbing p-type layers, respectively. Chemical vapor deposition (CVD) and atomic layer deposition (ALD) provide attractive routes to these layers. The literature on volatile tin(II) compounds used as CVD or ALD precursors shows that new compounds can provide different growth rates, film morphologies, preferred crystallographic orientations, and other material properties. We report here the synthesis and characterization of a new liquid tin(II) precursor, bis(N, N′-diisopropylformamidinato)tin(II) (1), which is effective in ALD of SnS in combination with H2S between 65 and 180 °C. Like other highly reactive tin(II) precursors, the growth per cycle linearly decreases from 0.82 Å/cycle at 65 °C to 0.4 Å/cycle at 180 °C. This is obviously different from the case of previously reported SnS ALD using bis(2,4pentanedionato)tin(II), Sn(acac)2, and H2S; films grow at 0.22-0.24 Å/cycle almost independent of the substrate temperature (125-225 °C, J. Phys. Chem. C 2010, 114, 17597). Quartz crystal microbalance (QCM) experiments for SnS ALD using 1 at 80, 120, and 160 °C were carried out to study the linear decrease of the growth per cycle with increasing substrate temperature. Based on these QCM studies, although the mechanism of chemisorption-loss of one ligand or two-can be manipulated by changing the exposure of 1, the purging time, or the temperature, only the temperature changes the growth per cycle. We therefore attribute the decreasing growth per cycle with increasing temperature to a decreasing surface thiol density. Photovoltaic devices prepared from 1-derived SnS have similar performance to the best devices prepared from other precursors, and the device yield and replicability of J-V properties are substantially increased by using 1.

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“…Although various available techniques such as chemical vapor deposition, [ 9,10 ] atomic layer deposition, [ 11,12 ] molecular beam epitaxy, [ 13,14 ] electrodeposition, [ 7,15 ] successive ionic layer adsorption and reaction, [ 16,17 ] vapor sublimation, [ 18 ] etc., are able to produce thin fi lms of MS, they lack generality or need sophisticated instrumentation, and are complicated. In this context, chemical bath deposition is inarguably the simplest method for thin fi lm deposition.…”

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confidence: 99%

Revisiting Metal Sulfide Semiconductors: A Solution‐Based General Protocol for Thin Film Formation, Hall Effect Measurement, and Application Prospects

Shinde

Patil

Cho

et al. 2015

Adv Funct Materials

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5739wileyonlinelibrary.com deposition method, which is facile, benign, and which can deposit a uniform MS thin fi lms is highly desirable. Although various available techniques such as chemical vapor deposition, [ 9,10 ] atomic layer deposition, [ 11,12 ] molecular beam epitaxy, [ 13,14 ] electrodeposition, [ 7,15 ] successive ionic layer adsorption and reaction, [ 16,17 ] vapor sublimation, [ 18 ] etc., are able to produce thin fi lms of MS, they lack generality or need sophisticated instrumentation, and are complicated. In this context, chemical bath deposition is inarguably the simplest method for thin fi lm deposition. Generally, a suitable complexing agent and pH regulating agents are added in order to avoid spontaneous precipitation in an aqueous bath, which makes the process complicated due to extremely critical optimization for concentration of complexing agents and pH adjustment for an individual MS case. [ 4,[19][20][21][22] As a result, development of MS fi lms by solution-based method has often been a case of trial-and-error with poor reproducibility, which remained as an unexplored research fi eld yet in material science and technology. In order to tackle the above problems in aqueous solution, the fi lm deposition reaction is carried out in ethanol solution without the use of any complexing and/or pH-regulating agents. This protocol relies on dissolution of metal salts and thioacetamide in ethanol and heating the solutions at 70 °C. Although very few reports on MS fi lm deposition from nonaqueous solution has been reported, [ 23,24 ] no general protocol is available that can be applied overall to deposit all variety of MS thin fi lms under similar conditions with good reproducibility. The proposed protocol is extremely simple and general, which can lay simple guidelines to fabricate almost all types of metal sulfi des uniformly over all area of the substrate, provided that the corresponding metal salts are soluble in ethanol. The as-deposited MS fi lms are highly crystalline even without thermal treatment. Interestingly, the fi lms can be directly grown on variety of conducting as well as non-conducting substrates such as glass, plastic, fl uorine doped tin oxide (FTO), Ti-foil, carbon paper, Whatman fi lter paper, etc., which can be of great technological importance. As an example of potential application of these thin fi lms, we demonstrate the use of NiS fi lm deposited on fl exible plastic substrates as FTO-free dual-functioned (electronic support + electrocatalytic) counter electrode in dye-sensitized solar cells Revisiting Metal Sulfi de

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Atomic Layer Deposition of CdS Films

Cited by 65 publications

References 40 publications

Atomic Layer Deposition of CdS Quantum Dots for Solid‐State Quantum Dot Sensitized Solar Cells

Atomic Layer Deposition of CdS Quantum Dots for Solid‐State Quantum Dot Sensitized Solar Cells

Atomic Layer Deposition of Tin Monosulfide Using Vapor from Liquid Bis(N,N′-diisopropylformamidinato)tin(II) and H₂S

Revisiting Metal Sulfide Semiconductors: A Solution‐Based General Protocol for Thin Film Formation, Hall Effect Measurement, and Application Prospects

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Atomic Layer Deposition of CdS Films

Cited by 65 publications

References 40 publications

Atomic Layer Deposition of CdS Quantum Dots for Solid‐State Quantum Dot Sensitized Solar Cells

Atomic Layer Deposition of CdS Quantum Dots for Solid‐State Quantum Dot Sensitized Solar Cells

Atomic Layer Deposition of Tin Monosulfide Using Vapor from Liquid Bis(N,N′-diisopropylformamidinato)tin(II) and H2S

Revisiting Metal Sulfide Semiconductors: A Solution‐Based General Protocol for Thin Film Formation, Hall Effect Measurement, and Application Prospects

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Atomic Layer Deposition of Tin Monosulfide Using Vapor from Liquid Bis(N,N′-diisopropylformamidinato)tin(II) and H₂S