2011
DOI: 10.7567/jjap.50.09na07
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Fabrication of Lead-Free (Na0.5K0.5)NbO3–BaZrO3–(Bi0.5Li0.5)TiO3Ferroelectric Thin Films on (111)Pt/Ti/SiO2/(100)Si Substrate by Pulsed Laser Deposition

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Cited by 2 publications
(3 citation statements)
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“…However, reports on such a study are limited even though there have been many fundamental thin film studies conducted. [6][7][8][9][10][11][12][13][14][15][16][17][18][19] An example of a compositional study was on hydrothermally synthesized (K,Na)NbO 3 epitaxial films grown on SrRuO 3 =(001)SrTiO 3 substrates. 20,21) In the reports, a monotonic increase in remanent polarization with increasing K content and a weak composition dependence in piezoelectric and dielectric properties were shown.…”
Section: Introductionmentioning
confidence: 99%
“…However, reports on such a study are limited even though there have been many fundamental thin film studies conducted. [6][7][8][9][10][11][12][13][14][15][16][17][18][19] An example of a compositional study was on hydrothermally synthesized (K,Na)NbO 3 epitaxial films grown on SrRuO 3 =(001)SrTiO 3 substrates. 20,21) In the reports, a monotonic increase in remanent polarization with increasing K content and a weak composition dependence in piezoelectric and dielectric properties were shown.…”
Section: Introductionmentioning
confidence: 99%
“…In the Li + , Ta 5+ , and Sb 5+ co‐doped films, the ε r was enhanced to 1450 when deposition temperature increased to 750 o C . The grains of BaZrO 3 and (Bi 0.5 ,Li 0.5 )TiO 3 co‐doped KNN‐based films manifested two different orientations on the Pt/(001)MgO substrate as shown in Figure , and larger P r value (24.5 µC cm −2 ) was obtained than that of ceramic counterparts and the films on (111)Pt/Ti/SiO 2 /(100)Si substrate . Moreover, the effects of LaNiO 3 bottom buffer layer of this film were also analyzed, which lead to smaller P r value due to the reaction of Ni with Nb .…”
Section: Synthetic Techniquesmentioning
confidence: 94%
“…The grains of BaZrO 3 and (Bi 0.5 ,Li 0.5 )TiO 3 co‐doped KNN‐based films manifested two different orientations on the Pt/(001)MgO substrate as shown in Figure , and larger P r value (24.5 µC cm −2 ) was obtained than that of ceramic counterparts and the films on (111)Pt/Ti/SiO 2 /(100)Si substrate . Moreover, the effects of LaNiO 3 bottom buffer layer of this film were also analyzed, which lead to smaller P r value due to the reaction of Ni with Nb . Additionally, Bi doping in (K 0.5 ,Na 0.5 )NbO 3 film improved the dielectric and ferroelectric properties .…”
Section: Synthetic Techniquesmentioning
confidence: 98%