Fabrication of large-grain polycrystalline Ge films using absorptive films

Kuo, Chil-Chyuan

doi:10.1007/s00340-008-3024-4

Search citation statements

Order By: Relevance

Paper Sections

Select...

E Detector1

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2013

Publication Types

Select...

Article1

Relationship

Self Cite0

Independent1

Authors

Journals

Cited by 1 publication

(1 citation statement)

References 28 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Instead, one can deposit Ge at low temperature using evaporation or sputtering which can then in principle be ELA [34]. …”

Section: E Detectormentioning

confidence: 99%

Back-End Deposited Silicon Photonics for Monolithic Integration on CMOS

Lee

Lipson

2013

IEEE J. Select. Topics Quantum Electron.

View full text Add to dashboard Cite

Abstract-We present the vision of back-end deposited silicon photonics (BDSP) and review works that have been done in this field. Individual aspects of BDSP platform including excimer-laserannealed polycrystalline silicon, low-loss plasma-enhanced chemical vapor deposition silicon nitride waveguide, modulator, detector, electrical interface, back-end CMOS compatibility, and benefits of the platform are discussed in detail.

show abstract

“…Instead, one can deposit Ge at low temperature using evaporation or sputtering which can then in principle be ELA [34]. …”

Section: E Detectormentioning

confidence: 99%