Fabrication of inverted pyramid structure by Cesium Chloride self-assembly lithography for silicon solar cell

Liu, Jing; Zhang, Xinshuai; Sun, G.S.; Wang, Bo; Zhang, Tianchong; Fu, Yi; Liu, Peng

doi:10.1016/j.mssp.2015.05.048

Cited by 13 publications

(3 citation statements)

References 22 publications

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“…A further increase in etching time can cause Si beneath Ti film to be gradually eroded, forming continuous inverted pyramids. [ 25 ] The PIMP‐Si array showed a well‐defined position and identical side lengths, revealing the perfect uniformity of colloidal lithography. The cross‐sectional field emission scanning electron microscope (FESEM) image of the heterojunction (shown in Figure 2d) presented a perfect isosceles triangle with a bevel of 54.7°, which was consistent with the dihedral angle of the (100) and (111) planes of Si, revealing the anisotropic etching of Si in NaOH solution.…”

Section: Resultsmentioning

confidence: 99%

Fabrication of a Periodic Inverse Micropyramid (PIMP)‐Si/In₂Se₃ Heterojunction Photodetector Array for RGB‐IR Image Sensing Application

Zhang

Zhu

Zhen

et al. 2022

Adv Materials Technologies

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Here, the fabrication of an addressable 8 × 8 photodetector array is reported by combining In2Se3 nanofilm with periodic inverse micropyramid‐Si (PIMP‐Si), which is obtained through colloidal lithography and anisotropic wet etching. Due to the unique configuration and the outstanding light trapping effect, the as‐fabricated heterojunction device presents an excellent self‐powered photoresponse over the broadband wavelength range from 265 to 1300 nm, with a peak sensitivity at ≈810 nm. The responsivity, specific detectivity, and rise/fall time are estimated to be 0.58 A W−1, 1.76 × 1012 Jones, and 5.1/18 µs, respectively, which are competitive in comparison with other devices with similar geometries. Meanwhile, the photodetector array displays a satisfactory pixel‐to‐pixel uniformity, which allows the device to record the full‐color image of “HFUT” with satisfying resolution, revealing the potential application of the PIMP‐Si/In2Se3 heterojunction photodetector array for real‐time red‐green‐blue‐infrared image sensing and video capturing.

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Section: Resultsmentioning

confidence: 99%

Fabrication of a Periodic Inverse Micropyramid (PIMP)‐Si/In₂Se₃ Heterojunction Photodetector Array for RGB‐IR Image Sensing Application

Zhang

Zhu

Zhen

et al. 2022

Adv Materials Technologies

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“…Moreover, due to the intense interest in b-Si textures on multi-Si, more than 70% of the reported b-Si solar cell results are using multi-Si, while research on mono-Si is significantly limited. Although lower reflectance nanotextured b-Si samples have shown better optical performance than RPD textures in mono-Si, their electrical losses outweigh these optical gains. , However, a few studies show the potential improvement of RPD mono-Si solar cells by applying b-Si textures onto the RPD textures, thereby forming a hierarchical structure. ,, In addition, inverted pyramid (IPD) is another promising texture, which is fabricated using a modified MCCE followed by anisotropic etching. ,,, It should be noted that IPD can be also fabricated by lithography techniques − and this was, for example, used in the record efficiency PERC solar cell . However, such lithography methods are complicated and costly; hence, they are not suitable for solar cell fabrication in mass production and will not be discussed in this work.…”

Section: Introductionmentioning

confidence: 99%

An Artificial-Intelligence-Assisted Investigation on the Potential of Black Silicon Nanotextures for Silicon Solar Cells

Wang

Xie

Liang

et al. 2022

ACS Appl. Nano Mater.

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Black silicon (b-Si) nanotextures are of interest for Si solar cells because of their enhanced light trapping properties. However, the wide range of complex nanotextured b-Si surface morphologies makes a systematic investigation of b-Si solar cells challenging. A comprehensive performance review is necessary to determine the promising b-Si nanotextures for solar cell applications. In this work, we use artificial-intelligence approaches to assist in compiling a systematic and highly refined performance review of b-Si solar cells. We also perform numerical simulations of electrical properties for various nanotextured b-Si morphologies. We find that the weighted average reflectance (WAR) is an effective surface morphology metric for a wide range of surface textures. By correlating solar cell performance parameters to WAR, we show that multicrystalline Si solar cell efficiency can be improved with b-Si nanotexturing, and this is predominately attributed to an increase in short-circuit current density via the blue response improvement. We also show that some b-Si nanotextures can improve the performance of monocrystalline Si solar cells. Device simulations show that the electrical performance of hierarchical (combination of microtexture and nanotexture) and inverted-pyramidal b-Si nanotextures and microtextures can be comparable to or even better than random pyramids. As such, these textures show great potential for monocrystalline Si solar cells.

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“…Notably, an IP textured silicon solar cell has broken the world record for solar cell performance with 25% conversion efficiency [16]. While various other methods have been used for the texturization of silicon wafers with IPs, such as laser texturization, lithography, and potential free wet chemical etching [17][18][19], MCCE techniques have been found to be the simplest and most costeffective processes for mass production [20].…”

Section: Introductionmentioning

confidence: 99%

Copper Assisted Inverted Pyramids Texturization of Monocrystalline Silicon in a Nitrogen Bubbling Bath for Highly Efficient Light Trapping

Kubendhiran

Sison

Hsu

et al. 2020

Silicon

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Inverted pyramid (IP) texturization on silicon wafers has recently attracted attention for the structure's light trapping ability and low specific surface area. The later property minimizes undesired carrier recombination for solar cells. Wet chemical etching methods based on alkaline and/or acidic etching have been found to be relatively cost effective for creating microscale IPs, and therefore have great potential for mass production. Metal catalytic chemical etching (MCCE) using acidic solutions is known to create these structures in the shortest timespan. In this work, we proposed a simple MCCE IP texturization method for (100) single crystalline silicon (sc-Si) using a Cu(SO 4 )/HF/H 2 O 2 /H 2 O solution in a bubbling bath. The experiment was performed with different etching times, concentrations of H 2 O 2 , and temperatures. As a unique design consideration, our process was conducted with a continuous flow of nitrogen gas bubbles to improve etching uniformity. Under optimized conditions, etching was demonstrated for full size wafers. In checking solution stability, it was found that hydrogen peroxide evaporation occurs throughout the entire process, significantly affecting etching rates and microstructure formation. Therefore, the continuous makeup of H 2 O 2 would be necessary for industrial production.

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Fabrication of inverted pyramid structure by Cesium Chloride self-assembly lithography for silicon solar cell

Cited by 13 publications

References 22 publications

Fabrication of a Periodic Inverse Micropyramid (PIMP)‐Si/In₂Se₃ Heterojunction Photodetector Array for RGB‐IR Image Sensing Application

Fabrication of a Periodic Inverse Micropyramid (PIMP)‐Si/In₂Se₃ Heterojunction Photodetector Array for RGB‐IR Image Sensing Application

An Artificial-Intelligence-Assisted Investigation on the Potential of Black Silicon Nanotextures for Silicon Solar Cells

Copper Assisted Inverted Pyramids Texturization of Monocrystalline Silicon in a Nitrogen Bubbling Bath for Highly Efficient Light Trapping

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Fabrication of inverted pyramid structure by Cesium Chloride self-assembly lithography for silicon solar cell

Cited by 13 publications

References 22 publications

Fabrication of a Periodic Inverse Micropyramid (PIMP)‐Si/In2Se3 Heterojunction Photodetector Array for RGB‐IR Image Sensing Application

Fabrication of a Periodic Inverse Micropyramid (PIMP)‐Si/In2Se3 Heterojunction Photodetector Array for RGB‐IR Image Sensing Application

An Artificial-Intelligence-Assisted Investigation on the Potential of Black Silicon Nanotextures for Silicon Solar Cells

Copper Assisted Inverted Pyramids Texturization of Monocrystalline Silicon in a Nitrogen Bubbling Bath for Highly Efficient Light Trapping

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Fabrication of a Periodic Inverse Micropyramid (PIMP)‐Si/In₂Se₃ Heterojunction Photodetector Array for RGB‐IR Image Sensing Application

Fabrication of a Periodic Inverse Micropyramid (PIMP)‐Si/In₂Se₃ Heterojunction Photodetector Array for RGB‐IR Image Sensing Application