2003
DOI: 10.1109/tasc.2003.813649
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Fabrication of high current density Nb integrated circuits using a self-aligned junction anodization process

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Cited by 31 publications
(27 citation statements)
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“…It is done differently in different technologies and in different labs. Most frequently, wet etching in acidic solutions is used [5], [20], [21]. Hydrogen contamination of Nb then occurs, as was observed in [5], with the typical concentration of the absorbed hydrogen of 1 to 2 atomic percent, similar to what we see after ion milling.…”
Section: Introductionsupporting
confidence: 60%
“…It is done differently in different technologies and in different labs. Most frequently, wet etching in acidic solutions is used [5], [20], [21]. Hydrogen contamination of Nb then occurs, as was observed in [5], with the typical concentration of the absorbed hydrogen of 1 to 2 atomic percent, similar to what we see after ion milling.…”
Section: Introductionsupporting
confidence: 60%
“…1 and Table I, the quality of our NbN/AlN/NbN junctions is not only better than that of all previously reported NbN tunnel junctions 9-12,15-17 but also comparable with or better than that of high-quality Nb tunnel junctions. [19][20][21] The controllability of J c is one of the important issues for junction applications. In this work, J c (i.e., the thickness of AlN barriers) is controlled by depositing time at a very low deposition rate of 0.05 nm/s.…”
mentioning
confidence: 99%
“…In second iteration of Flux-1 this gate size increase was compensated by area savings due to dropping explicit drivers and receivers. This issue is addressed in our next generation J110E technology [10], which introduces higher resistance per square for shunts.…”
Section: B Second Iteration: Gates Matched To Transmission Linesmentioning
confidence: 99%