Abstract:Representative tin sulfide compounds, tin monosulfide (SnS) and tin disulfide (SnS) are strong candidates for future nanoelectronic devices, based on non-toxicity, low cost, unique structures and optoelectronic properties. However, it is insufficient for synthesizing of tin sulfide thin films using vapor phase deposition method which is capable of fabricating reproducible device and securing high quality films, and their device characteristics. In this study, we obtained highly crystalline SnS thin films by at… Show more
“…The crystallization behavior in this experiment was different from our previous reports that directly deposited SnS film by ALD, which showed only a main (111) peak of orthorhombic SnS phase at 31.53 • [25]. Furthermore, this process used a high growth rate of 5.3 Å/cycle.…”
Section: Development Of a Process Proper For Obtaining A Thick Sns Ficontrasting
confidence: 87%
“…In that research, the growth rate of the ALD SnS process was 0.9 Å/cycle, and the deposition of a 500 nm thick SnS film required a long deposition time [2,22]. Other ALD SnS studies have showed lower growth rates of 0.24 to 0.36 Å/cycle [23][24][25][26]. The growth rate of general films deposited with ALD is about 1 Å/cycle, but the growth rates of ALD-deposited SnS films are lower than 1 Å/cycle.…”
Tin monosulfide (SnS) is a promising p-type semiconductor material for energy devices. To realize the device application of SnS, studies on process improvement and film characteristics of SnS is needed. Thus, we developed a new film process using atomic layer deposition (ALD) to produce SnS films with high quality and various film characteristics. First, a process for obtaining a thick SnS film was studied. An amorphous SnS2 (a-SnS2) film with a high growth rate was deposited by ALD, and a thick SnS film was obtained using phase transition of a-SnS2 film by vacuum annealing. Subsequently, we investigated the effect of seed layer on formation of SnS film to verify the applicability of SnS to various devices. Separately deposited crystalline SnS and SnS2 thin films were used as seed layer. The SnS film with a SnS seed showed small grain size and high film density from the low surface energy of the SnS seed. In the case of the SnS film using a SnS2 seed, volume expansion occurred by vertically grown SnS grains due to a lattice mismatch with the SnS2 seed. The obtained SnS film using the SnS2 seed exhibited a large reactive site suitable for ion exchange.
“…The crystallization behavior in this experiment was different from our previous reports that directly deposited SnS film by ALD, which showed only a main (111) peak of orthorhombic SnS phase at 31.53 • [25]. Furthermore, this process used a high growth rate of 5.3 Å/cycle.…”
Section: Development Of a Process Proper For Obtaining A Thick Sns Ficontrasting
confidence: 87%
“…In that research, the growth rate of the ALD SnS process was 0.9 Å/cycle, and the deposition of a 500 nm thick SnS film required a long deposition time [2,22]. Other ALD SnS studies have showed lower growth rates of 0.24 to 0.36 Å/cycle [23][24][25][26]. The growth rate of general films deposited with ALD is about 1 Å/cycle, but the growth rates of ALD-deposited SnS films are lower than 1 Å/cycle.…”
Tin monosulfide (SnS) is a promising p-type semiconductor material for energy devices. To realize the device application of SnS, studies on process improvement and film characteristics of SnS is needed. Thus, we developed a new film process using atomic layer deposition (ALD) to produce SnS films with high quality and various film characteristics. First, a process for obtaining a thick SnS film was studied. An amorphous SnS2 (a-SnS2) film with a high growth rate was deposited by ALD, and a thick SnS film was obtained using phase transition of a-SnS2 film by vacuum annealing. Subsequently, we investigated the effect of seed layer on formation of SnS film to verify the applicability of SnS to various devices. Separately deposited crystalline SnS and SnS2 thin films were used as seed layer. The SnS film with a SnS seed showed small grain size and high film density from the low surface energy of the SnS seed. In the case of the SnS film using a SnS2 seed, volume expansion occurred by vertically grown SnS grains due to a lattice mismatch with the SnS2 seed. The obtained SnS film using the SnS2 seed exhibited a large reactive site suitable for ion exchange.
“…These findings suggest that the formation of SnS is more favourable at high temperatures, as compared to relatively low temperatures. From these observations and others, it is clear that temperature plays a crucial role in determining the phase of ALD-grown thin film 12,34–36 .Figure 1GIAXRD patterns of the as-grown ALD-SnS x films on Si/SiO 2 substrate.…”
Section: Resultsmentioning
confidence: 64%
“…3a). The 3d 5/2 transition was deconvoluted into three peaks at BE values 483.8 eV, 485.6 eV, and 486.5 eV, corresponding to the Sn oxidation state of 0, + 2 and + 4, respectively 11,12 . The XPS analysis suggests that the dominant phase is SnS for the thin film deposited at 180 °C; however, the formation of metallic Sn in notable quantities was also evident.Figure 3X-ray photoelectron spectroscopy spectra of Sn 3d region for ( a ) SnS x @NF-180 and ( b ) SnS x @NF-160; S 2p region for ( c ) SnS x @NF-180 and ( d ) SnS x @NF-160.…”
Section: Resultsmentioning
confidence: 99%
“…Generally, carbon-based materials work as double-layer capacitors, while the transition metal-based electrodes typically show pseudocapacitance behavior 6–9 . Transition metal dichalcogenides (TMDCs) of MX 2 , where M is the transition metal and X can be sulfur (S), selenium (Se), or tellurium (Te), are extensively studied in energy storage applications, due to their high capacity and high power density that could be attributed to their layered structures, high surface areas, and electronic conductivities 10–12 . Among them, the transition metal sulfides, such as molybdenum disulfide (MoS 2 ) and tungsten disulfide (WS 2 ) have been investigated mostly for improving the supercapacitor performance 7,13,14 .…”
Layered Sn-based chalcogenides and heterostructures are widely used in batteries and photocatalysis, but its utilizations in a supercapacitor is limited by its structural instability and low conductivity. Here, SnS
x
thin films are directly and conformally deposited on a three-dimensional (3D) Ni-foam (NF) substrate by atomic layer deposition (ALD), using tetrakis(dimethylamino)tin [TDMASn, ((CH
3
)
2
N)
4
Sn] and H
2
S that serves as an electrode for supercapacitor without any additional treatment. Two kinds of ALD-SnS
x
films grown at 160 °C and 180 °C are investigated systematically by X-ray diffractometry, Raman spectroscopy, X-ray photoelectron spectroscopy, and transmission electron microscopy (TEM). All of the characterization results indicate that the films deposited at 160 °C and 180 °C predominantly consist of hexagonal structured-SnS
2
and orthorhombic-SnS phases, respectively. Moreover, the high-resolution TEM analyses (HRTEM) reveals the (001) oriented polycrystalline hexagonal-SnS
2
layered structure for the films grown at 160 °C. The double layer capacitance with the composite electrode of SnS
x
@NF grown at 160 °C is higher than that of SnS
x
@NF at 180 °C, while pseudocapacitive Faradaic reactions are evident for both SnS
x
@NF electrodes. The superior performance as an electrode is directly linked to the layered structure of SnS
2
. Further, the optimal thickness of ALD-SnS
x
thin film is found to be 60 nm for the composite electrode of SnS
x
@NF grown at 160 °C by controlling the number of ALD cycles. The optimized SnS
x
@NF electrode delivers an areal capacitance of 805.5 mF/cm
2
at a current density of 0.5 mA/cm
2
and excellent cyclic stability over 5000 charge/discharge cycles.
it was soon replaced by other materials. Research on the fundamental properties and preparation of TMDC monolayers in solution (1986), [8] on single-crystal substrates in ultrahigh vacuum (2001), [9] and in an accessible way using mechanical exfoliation [10] (2005) followed. It was the discovery of graphene in 2004 [11] with its ever expanding list of unique and exciting properties, phenomena, and potential applications [12] that amassed broad attention to 2D materials and resulted in the 2010 Nobel Prize in Physics awarded to Andre Geim and Konstantin Novoselov. Tremendous efforts have been put toward synthesis and applications of graphene, including the billion euro Graphene Flagship project funded by the European Union. [13,14] Graphene is a semimetal, however, and the need to have semiconducting materials for many crucial applications, in particular in electronics, has led researchers to search for other 2D materials. The scientific community turned to TMDCs following breakthroughs in observation of unique thickness-dependent properties, [15,16] monolayer synthesis using chemical vapor deposition (CVD), [17,18] and demonstration of high-performance semiconductor devices [19-21] in 2010-2013 (Figure 1). Indeed, in 2013 the number of scientific publications on TMDCs, in particular MoS 2 , nearly tripled over 2012, and the strong growth has continued to date, fueled by advances in synthesis, new devices, and exciting physical phenomena. The explosive growth in MoS 2 research has also expanded to other TMDCs, [22] resulting in yet new phenomena and potential applications being found. [23-26] It is now clear that TMDCs are remarkable in many ways. Their layered crystal structure gives rise to fundamental physics not seen in 3D materials, which enables novel devices and applications. [25,26,32,34-36] The layered structure also gives TMDCs their highly anisotropic properties, extremely high specific surface areas, possibility to intercalate different species between the layers, and stability as ultrathin sheets down to three atomic layers thick. The TMDC family contains dozens of different materials from semiconductors to semimetals, metals, and even superconductors. [5,22,25,34] However, TMDC research is still mostly in the early discovery stages and the investigations of TMDCs largely continue using flakes produced by mechanical exfoliation of bulk crystals. [10,26] Unfortunately, this method cannot be scaled up for practical 2D transition metal dichalcogenides (TMDCs) are among the most exciting materials of today. Their layered crystal structures result in unique and useful electronic, optical, catalytic, and quantum properties. To realize the technological potential of TMDCs, methods depositing uniform films of controlled thickness at low temperatures in a highly controllable, scalable, and repeatable manner are needed. Atomic layer deposition (ALD) is a chemical gas-phase thin film deposition method capable of meeting these challenges. In this review, the applications evaluated for ALD TMDCs are systematically...
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