Fabrication of high aspect ratio silicon micro-structures based on aluminum mask patterned by IBE and RIE processing

Mu, Jiliang; Chou, Xiujian; He, Tiancheng; Ma, Zhanfang; He, Jian; Xiong, Jijun

doi:10.1007/s00542-015-2661-x

Cited by 14 publications

(6 citation statements)

References 29 publications

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“…Previous studies have also focused on high-aspectratio etching for micromechanical devices. Notable findings include a 5-mm-wide and 115-mm-deep trench (aspect ratio up to 23) in Zhou's 20 study, a 7-mm-wide and 160-mm-deep trench (aspect ratio up to 22.8) in Mu's 21 study, and a 5-mm-wide and 144.2-mm-deep trench (aspect ratio up to 28.8) in Hu's 22 study. Figure 19 shows a comparable series of trenches of 12 mm in width and 377 mm in depth (aspect ratio up to 31.4), with a sidewall angle of 89°, which reaches the highest aspect ratio and the deepest etching.…”

Section: Experiential Function Formulamentioning

confidence: 95%

Effects of deep reactive ion etching parameters on etching rate and surface morphology in extremely deep silicon etch process with high aspect ratio

Tao

et al. 2017

Advances in Mechanical Engineering

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This study empirically investigates the influences of several parameters on surface morphology and etch rate in a high-aspect-ratio silicon etching process. Two function formulas were obtained, revealing the relationship between the controlled parameters and the etching results. All the experiments were conducted on an inductively coupled plasma system, using a Bosch process. The tested trenches' width ranged from 15 to 1500 mm and their depth ranged from 50 to 500 mm, which covers nearly all the typical sizes of micromechanical devices in practical applications. The controlled parameters are etching chamber pressure, bias power, and gas flow rate. The parameters of surface morphology include sidewall angle, surface roughness, and sidewall condition. We tested how the controlled parameters can influence the surface morphology and etch rate and formulated assumptions to explain those relationships. Meanwhile, we utilized linear regression to obtain experiential function formulas of the relationships among etch depth, structure width, etching time, and passivation time, with a correlation coefficient higher than 0.99. Using these formulas, 12-mm-wide and 377-mm-deep (aspect ratio 31.4) trenches with sidewall angles of 89°were achieved. Additionally, this experience was applied as a critical structure in a gas turbine structure system.

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Section: Experiential Function Formulamentioning

confidence: 95%

Effects of deep reactive ion etching parameters on etching rate and surface morphology in extremely deep silicon etch process with high aspect ratio

Tao

et al. 2017

Advances in Mechanical Engineering

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“…Figure 3a-c shows the topographies of Al 2 O 3 , TiO 2 , and HfO 2 film with a thickness of 25 nm-based MIM capacitors. The analysis result reflects that the root-mean-square (Rq) roughness values of these three materials are only 2.18 nm, 2.57 nm, and 2.22 nm, which can indirectly depict the special surface area [32][33][34]. It was noticed that there are certain white "defects" in the film itself after ALD deposition, and these white "defects" actually refer to the peaks of the surface undulation of the dielectric layer.…”

Section: Resultsmentioning

confidence: 94%

Dielectric Properties Investigation of Metal–Insulator–Metal (MIM) Capacitors

Xiong

Zhao³

et al. 2022

Molecules

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This study presents the construction and dielectric properties investigation of atomic-layer-deposition Al2O3/TiO2/HfO2 dielectric-film-based metal–insulator–metal (MIM) capacitors. The influence of the dielectric layer material and thickness on the performance of MIM capacitors are also systematically investigated. The morphology and surface roughness of dielectric films for different materials and thicknesses are analyzed via atomic force microscopy (AFM). Among them, the 25 nm Al2O3-based dielectric capacitor exhibits superior comprehensive electrical performance, including a high capacitance density of 7.89 fF·µm−2, desirable breakdown voltage and leakage current of about 12 V and 1.4 × 10−10 A·cm−2, and quadratic voltage coefficient of 303.6 ppm·V−2. Simultaneously, the fabricated capacitor indicates desirable stability in terms of frequency and bias voltage (at 1 MHz), with the corresponding slight capacitance density variation of about 0.52 fF·µm−2 and 0.25 fF·µm−2. Furthermore, the mechanism of the variation in capacitance density and leakage current might be attributed to the Poole–Frenkel emission and charge-trapping effect of the high-k materials. All these results indicate potential applications in integrated passive devices.

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“…Firstly, the wafer is etched by the deep reactive ion etching process into micro-trench arrays with a width of 6 μm and a depth of 160 μm as shown in Figure 1a. The capacitors are formed on high aspect ratio micro-trench structures that we have previously reported [22]. Then, 300 nm SiO 2 is grown by dry oxidation as an isolation layer to avoid the premature breakdown of the MIM capacitors due to the rough sidewall surface of the trenches.…”

Section: Methodsmentioning

confidence: 99%

High-Performance MIM Capacitors for a Secondary Power Supply Application

Chou

et al. 2018

Micromachines

Self Cite

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Microstructure is important to the development of energy devices with high performance. In this work, a three-dimensional Si-based metal-insulator-metal (MIM) capacitor has been reported, which is fabricated by microelectromechanical systems (MEMS) technology. Area enlargement is achieved by forming deep trenches in a silicon substrate using the deep reactive ion etching method. The results indicate that an area of 2.45 × 103 mm2 can be realized in the deep trench structure with a high aspect ratio of 30:1. Subsequently, a dielectric Al2O3 layer and electrode W/TiN layers are deposited by atomic layer deposition. The obtained capacitor has superior performance, such as a high breakdown voltage (34.1 V), a moderate energy density (≥1.23 mJ/cm2) per unit planar area, a high breakdown electric field (6.1 ± 0.1 MV/cm), a low leakage current (10−7 A/cm2 at 22.5 V), and a low quadratic voltage coefficient of capacitance (VCC) (≤63.1 ppm/V2). In addition, the device’s performance has been theoretically examined. The results show that the high energy supply and small leakage current can be attributed to the Poole–Frenkel emission in the high-field region and the trap-assisted tunneling in the low-field region. The reported capacitor has potential application as a secondary power supply.

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Fabrication of high aspect ratio silicon micro-structures based on aluminum mask patterned by IBE and RIE processing

Cited by 14 publications

References 29 publications

Effects of deep reactive ion etching parameters on etching rate and surface morphology in extremely deep silicon etch process with high aspect ratio

Effects of deep reactive ion etching parameters on etching rate and surface morphology in extremely deep silicon etch process with high aspect ratio

Dielectric Properties Investigation of Metal–Insulator–Metal (MIM) Capacitors

High-Performance MIM Capacitors for a Secondary Power Supply Application

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