Fabrication of hierarchical Sn-doped ZnO nanorod arrays through sonicated sol−gel immersion for room temperature, resistive-type humidity sensor applications

Ismail, A. S.; Mamat, M. H.; Sin, N. D. Md; Malek, M. F.; Zoolfakar, Ahmad Sabirin; Suriani, A. B.; Mohamed, Azmi; Ahmad, Mansoor; Rusop, M.

doi:10.1016/j.ceramint.2016.03.071

Cited by 75 publications

(23 citation statements)

References 64 publications

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“…The seed layer film possessed the lowest transmittance may be due to the lowest thickness compared to other films. Similar to other film, the variation of average transmittance is expected from the difference in film thicknesses, which is the cause for optical scattering effect [12]. 397…”

Section: Results and Analysismentioning

confidence: 96%

Intrinsic ZnO/Al-doped ZnO Homojunction: Structural and Optical Properties

Ismail¹,

Mamat²,

Malek³

et al. 2018

IJEECS

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<p>Intrinsic zinc oxide (ZnO)/Al-doped ZnO (AZO) homojunction film was prepared using two-step immersion processes. The film was characterized using field emission scanning electron microscopy, X-ray diffraction (XRD), Raman spectroscopy, and ultraviolet–visible spectrophotometer to investigate their structural and optical properties. The surface morphology image displays that the ZnO deposited on the nanorod surfaces in layer form with average diameter of nanorods about 95 nm. The structural properties of XRD pattern demonstrate that the film possessed good crystallinity with the preferred orientation at (002) plane. The film also possessed excellent absorption in the ultraviolet (UV) region with optical band gap energy of 3.22 eV. These results indicate that the film has a good potential for optical-based device such a UV sensor.</p>

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Section: Results and Analysismentioning

confidence: 96%

Intrinsic ZnO/Al-doped ZnO Homojunction: Structural and Optical Properties

Ismail¹,

Mamat²,

Malek³

et al. 2018

IJEECS

Self Cite

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“…Among solution-based deposition methods, hydrothermal method is the most commonly used for ZnO nanorod synthesis (Ahmad et al 2017;Fathollahzadeh et al 2018;Resmini et al 2016). This approach offers simplest preparation set-up, least energy consuming and low production cost where the ZnO nanorod can be grown under mild synthesis condition (such as normal pressure and low growth temperature), simple facility, good repeatability and high reliability (Gao et al 2010;Ismail et al 2016;Zhang et al 2019). ZnO seed layer is needed in order to grow ZnO nanorod/nanowire using hydrothermal method (Cheng et al 2016;Hassanpour et al 2017;Park et al 2016).…”

Section: Growth Of Zinc Oxide Nanorod Using Hydrothermal Methodsmentioning

confidence: 99%

Recent Progress on Fabrication of Zinc Oxide Nanorod-based Field Effect Transistor Biosensors

Karim¹,

Chang²,

Majlis³

et al. 2019

JSM

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Zinc oxide is a unique n-type semiconducting material, owing to wide bandgap of ~3.37 eV, non-toxic, bio-safe and biocompatible with high isoelectric point of ~9.5, make it as promising biomaterial to be utilized as sensing matrix in biosensor applications. In addition, ZnO that possess high electron affinity provide a good conduction pathway for the electrons hence result in significant electrical signal change upon detection to target biomolecules. Moreover, high surface area of ZnO nanorod enhance immobilization of enzymes, hence, increase the device performance. Field effect transistor (FET)-based biosensor offer simplicity in handling and label-free, has also become research topic among researchers for novel biosensor development. This review aims to explore the preparation of ZnO nanorod using hydrothermal method and investigate the fabrication of ZnO nanorod-based FET biosensor. Thus, contribute to enhance understanding towards biosensor development for health monitoring, especially based on FETs structure devices.

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“…Doping is a process of introducing extrinsic elements into intrinsic structure for the purpose of improving and altering their basic properties such as structural, optical, and electrical. This process is crucial for various materials especially semiconductors since intrinsic semiconductor is known to possess deficiencies such as low carrier concentrations and lagging change in resistance values for humidity sensing applications [24,25]. From the literature, ZnO was reported to be doped with numerous kinds of elements [26][27][28][29].…”

Section: Metal-doped Znomentioning

confidence: 99%

Aluminum- and Iron-Doped Zinc Oxide Nanorod Arrays for Humidity Sensor Applications

Ismail¹,

Mamat²,

Mahmood³

2017

Nanostructured Materials - Fabrication to Applications

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Metal-doped zinc oxide (ZnO) nanorod arrays have attracted much attention due to improvement in their electrical, structural, and optical properties upon doping. In this chapter, we discuss the effects of aluminum (Al)-and iron (Fe)-doping on ZnO nanorod arrays properties particularly for humidity sensor applications. Compared to Fe, Al shows more promising characteristics as doping element for ZnO nanorod arrays. The Al-doped ZnO nanorod arrays showed dense arrays, small nanorods diameter, and high porous surface. The I-V characteristics showed that Al-doped sample possesses higher conductivity. From the humidity sensing performance of the samples, Al-doped ZnO nanorod arrays possess the superior sensitivity, more than two times higher than that of the undoped ZnO nanorod arrays sample, demonstrating great potential of Al-doped ZnO nanorod arrays in humidity sensor applications.

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Fabrication of hierarchical Sn-doped ZnO nanorod arrays through sonicated sol−gel immersion for room temperature, resistive-type humidity sensor applications

Cited by 75 publications

References 64 publications

Intrinsic ZnO/Al-doped ZnO Homojunction: Structural and Optical Properties

Intrinsic ZnO/Al-doped ZnO Homojunction: Structural and Optical Properties

Recent Progress on Fabrication of Zinc Oxide Nanorod-based Field Effect Transistor Biosensors

Aluminum- and Iron-Doped Zinc Oxide Nanorod Arrays for Humidity Sensor Applications

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