Fabrication of heterogeneous LNOI photonics wafers through room temperature wafer bonding using activated Si atomic layer of LiNbO3, glass, and sapphire

Watanabe, Kojiro; Takigawa, Ryo

doi:10.1016/j.apsusc.2023.156666

Cited by 5 publications

(1 citation statement)

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“…A Si atomic layer can be a good alternative in this regard, as it is highly transparent over a wide range of infrared wavelengths. Meanwhile, a bonding method using an activated Si atomic layer was demonstrated to be effective for improving the bond strength in the bonding of oxide materials. ,− It might be interesting to apply both SAB and bonding using an activated Si atomic layer for the bonding of InP wafers. Moreover, it would be meaningful to analyze the effect of bonding and observe the state of the bond interface for investigating the mechanism of the room-temperature bonding of InP.…”

Section: Introductionmentioning

confidence: 99%

Room-Temperature Bonding of Indium Phosphide Wafers and Their Atomic Structure at the Bond Interface

Zhang,

Murakami,

Takigawa

2023

ACS Appl. Electron. Mater.

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In this study, we investigated the room-temperature wafer bonding of indium phosphide (InP) and its atomic-scale bond interface formation. The direct bonding of InP/InP wafers via surface-activated bonding (SAB) and room-temperature bonding involving an activated Si atomic layer was compared. Particularly, the bond strength, surface morphology, and atomic structure in the bond interface were investigated. In contrast to SAB, the bonding involving the activated Si atomic layer afforded more than 2-fold increase in bond strength. This is because, unlike that in SAB, the InP surface was not directly irradiated by an Ar fast atomic beam; instead, a layer of activated Si atoms was deposited. Consequently, the surface roughness of the wafers was lower than that obtained using SAB. The atomic structure of the wafer surface was maintained after activation, and atomic contact between the wafers was achieved. The diffusion of In and P into the Si atomic layers affected the bond strength, indicating that the InP–InP bonding in the wafers through an activated Si atomic layer was different from the simple bonding of two Si bulks. Notably, the state of the bond interface obtained via SAB was different from that obtained via SAB of other semiconductor materials. The room-temperature bonding method will be significantly useful in the development of fabrication techniques for the heterogeneous integration of InP-based electronics and photonics.

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