Fabrication of gold-doped crystalline-silicon nanomembrane-based wearable temperature sensor

Kang, Kyungran; Sang, Mingyu; Xu, Baoxing

doi:10.1016/j.xpro.2022.101925

Cited by 6 publications

(6 citation statements)

References 29 publications

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“…SOI is a prominent semiconductor structure comprised of a bottom thick Si substrate layer, a middle silicon dioxide (SiO 2 ) layer, and an ultrathin top Si layer with nano/microscale thickness. One of the top-down approaches utilizing the SOI for flexible electronics is the SOI based transfer technique that utilizes the top single-crystalline Si nano/micro membrane for flexible electronic applications [144][145][146][147][148][149]. To apply the top Si into flexible electronics, it is essential to separate the top Si layer by sacrificing the middle SiO 2 layer.…”

Section: Soi Based Transfer Techniquementioning

confidence: 99%

“…Furthermore, the well-established fabrication process ensures consistent uniformity and a high yield [139][140][141][142][143]. The top-down approaches encompass various transfer methods, including silicon-on-insulator (SOI) [144][145][146][147][148][149], <111> wafer undercut etching [34,139,[150][151][152][153], metal-assisted chemical etching (MACE) [154][155][156][157], epitaxy-free methods [158][159][160][161], crack-based exfoliation [162][163][164][165][166], and bonding technology [128,167,168].…”

Section: Introductionmentioning

confidence: 99%

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Novel fabrication techniques for ultra-thin silicon based flexible electronics

Lee,

Ju,

Lee

et al. 2024

Int. J. Extrem. Manuf.

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Flexible electronics offer a multitude of advantages, such as flexibility, lightweight properties, portability, and high durability. These unique properties allow for seamless applications to curved and soft surfaces, leading to extensive utilization across a wide range of fields in consumer electronics. These applications, for example, span integrated circuits, solar cells, batteries, wearable devices, bio-implants, soft robotics, and biomimetic applications. Recently, flexible electronic devices have been developed using a variety of materials such as organic, carbon-based, and inorganic semiconducting materials. Silicon (Si) owing to its mature fabrication process, excellent electrical, optical, thermal properties, and cost-efficiency, remains a compelling material choice for flexible electronics. Consequently, the research on ultra-thin Si in the context of flexible electronics is studied rigorously nowadays. The thinning of Si is crucially important for flexible electronics as it reduces its bending stiffness and the resultant bending strain, thereby enhancing flexibility while preserving its exceptional properties. This review provides a comprehensive overview of the recent efforts in the fabrication techniques for forming ultra-thin Si using top-down and bottom-up approaches and explores their utilization in flexible electronics and their applications.

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Section: Soi Based Transfer Techniquementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Novel fabrication techniques for ultra-thin silicon based flexible electronics

Lee,

Ju,

Lee

et al. 2024

Int. J. Extrem. Manuf.

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“…As a solution, silicon-based materials (such as Si, SiO 2 , SiC, and silicide) that can provide both active electronic functions and long-term stable operation are the focus of current research. [22,99,101,129] They can be multiplexed to achieve fewer transistors and more channels and can amplify signals to obtain weak signals. In addition, recent studies have shown that using thin, transfer-printed SiO 2 layers with different thicknesses produced by thermal growth on silicon wafers as barrier layers can well adjust encapsulation time up to 60 years.…”

Section: Long-lived Neural Recoding/ Stimulation With Sic Interfacesmentioning

confidence: 99%

“…Commonly used active materials usually have a low channel count (i.e., in the hundreds of channels), a small acquisition area, and yet remain rigid (Young's modulus of GPa). As a solution, silicon‐based materials (such as Si, SiO 2 , SiC, and silicide) that can provide both active electronic functions and long‐term stable operation are the focus of current research [22,99,101,129] . They can be multiplexed to achieve fewer transistors and more channels and can amplify signals to obtain weak signals.…”

Section: Challenges and Perspectivesmentioning

confidence: 99%

Flexible, ultrathin bioelectronic materials and devices for chronically stable neural interfaces

Zhou,

Wu,

Sun

et al. 2023

Brain-X

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Advanced technologies that can establish intimate, long‐lived functional interfaces with neural systems have attracted increasing interest due to their wide‐ranging applications in neuroscience, bioelectronic medicine, and the associated treatment of neurodegenerative diseases. A critical challenge of significance remains in the development of electronic platforms that offer conformal contact with soft brain tissue for the sensing or stimulation of brain activities and chronically stable operation in vivo, at scales that range from cellular‐level resolution to macroscopic areas. This review summarizes recent advances in this field, with an emphasis on the use of demonstrated concepts, constituent materials, engineered designs, and system integration to address the current challenges. The article begins with an overview of recent bioelectronic platforms with unique form factors, ranging from filamentary probes to conformal sheets and three‐dimensional frameworks for alleviating the mechanical mismatch between interface materials and neural tissues. Next, active interfaces which utilize inorganic/organic semiconductor‐enabled devices are reviewed, highlighting various working principles of recording mechanisms including capacitively and conductively coupled sensing enabled by high transistor matrices at high spatiotemporal resolution. The subsequent section presents approaches to biological integration which use active materials for multiplexed addressing, local amplification and multimodal operation with high‐channel‐count and large‐scale electronic systems in a safe fashion that provides multi‐decade stable performance in both animal models and human subjects. The advances summarized in this review will guide the future direction of this technology and provide a basis for next‐generation chronic neural interfaces with long‐lived high‐performance operation.

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“…In recent decades, flexible electronics have demonstrated their functionalities in various forms, resulting in innovative advancements in diverse electronic systems such as flexible displays, [1][2][3] healthcare monitoring, [4,5] e-skin sensors, [6,7] wearable electronics, [8][9][10] and implantable devices, [11][12][13][14] which were previously impossible to demonstrate with conventional rigid-based electronics. As a result of the development of flexible electronics, the constituent materials and manufacturing techniques for flexible electronics have undergone continuous improvement to maintain their high electrical performance despite substantial mechanical deformation.…”

Section: Introductionmentioning

confidence: 99%

Ultrathin Crystalline Silicon Nano and Micro Membranes with High Areal Density for Low‐Cost Flexible Electronics

Lee

Shin

Kim

et al. 2023

Small

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Ultrathin crystalline silicon is widely used as an active material for high‐performance, flexible, and stretchable electronics, from simple passive and active components to complex integrated circuits, due to its excellent electrical and mechanical properties. However, in contrast to conventional silicon wafer‐based devices, ultrathin crystalline silicon‐based electronics require an expensive and rather complicated fabrication process. Although silicon‐on‐insulator (SOI) wafers are commonly used to obtain a single layer of crystalline silicon, they are costly and difficult to process. Therefore, as an alternative to SOI wafers‐based thin layers, here, a simple transfer method is proposed for printing ultrathin multiple crystalline silicon sheets with thicknesses between 300 nm to 13 µm and high areal density (>90%) from a single mother wafer. Theoretically, the silicon nano/micro membrane can be generated until the mother wafer is completely consumed. In addition, the electronic applications of silicon membranes are successfully demonstrated through the fabrication of a flexible solar cell and flexible NMOS transistor arrays.

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Fabrication of gold-doped crystalline-silicon nanomembrane-based wearable temperature sensor

Cited by 6 publications

References 29 publications

Novel fabrication techniques for ultra-thin silicon based flexible electronics

Novel fabrication techniques for ultra-thin silicon based flexible electronics

Flexible, ultrathin bioelectronic materials and devices for chronically stable neural interfaces

Ultrathin Crystalline Silicon Nano and Micro Membranes with High Areal Density for Low‐Cost Flexible Electronics

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