Fabrication of GaN nanowalls and nanowires using surface charge lithography

Popa, V.; Tiginyanu, I. M.; Volciuc, O.; Sarua, Andrei; Kuball, Martin; Heard, Peter J

doi:10.1016/j.matlet.2008.08.046

Cited by 23 publications

(15 citation statements)

References 10 publications

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“…Selective silicon etching allowed one to fabricate 20–35 nm thick AlN/GaN crystalline porous free‐standing membranes on Si(111) 5. Recently we reported the fabrication of nanometer‐thick GaN membranes suspended on a network of whiskers representing threading dislocations 6, 7 using the approach of surface charge lithography (SCL); SCL is based on direct ion‐beam‐writing of surface negative charge with subsequent photoelectrochemical (PEC) etching of the GaN epilayer 8, 9. In this work, we demonstrate for the first time the maskless fabrication of ultrathin GaN membranes suspended on specially designed GaN micro‐ and nanostructures.…”

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confidence: 99%

“…According to the concept of SCL 6, 7, the treatment of the sample surface by low‐energy ions creates deep acceptors which trap electrons thus forming a shield of negative charge that protects the material against PEC dissolution. Monte Carlo simulations predict the main projected range of the 1 keV Ar + ions in the GaN matrix to be 1.7 nm, while for 30 keV Ga + ions the projected range is of about 14 nm 6, 9. Closed circuit PEC etching was carried out at 300 K in a stirred 0.1 mol aqueous solution of KOH for periods up to 2.5 h under in‐situ UV illumination provided by focusing the radiation of a 350 W Hg lamp to a spot of ∼3.5 mm in diameter on the sample surface.…”

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confidence: 99%

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Design and maskless fabrication of ultrathin suspended membranes of GaN

Tiginyanu

Popa

Stevens‐Kalceff

et al. 2012

Physica Rapid Research Ltrs

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We report the maskless fabrication of ultrathin suspended GaN membranes designed by focused ion beam treatment of the GaN epilayer surface with subsequent photoelectrochemical etching. This technological approach allows the fabrication of ultrathin membranes, as well as supporting micro/nanocolumns in a controlled fashion. The analysis of the spatial and spectral distribution of microcathodoluminescence demonstrates that the membranes exhibit mainly yellow luminescence. These results pave the way for the fabrication of ultrathin suspended GaN membranes for MEMS/NEMS applications. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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confidence: 99%

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confidence: 99%

Design and maskless fabrication of ultrathin suspended membranes of GaN

Tiginyanu

Popa

Stevens‐Kalceff

et al. 2012

Physica Rapid Research Ltrs

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“…Low-dose low-energy ion-beam treatment induces a negative charge on the semiconductor surface, which shields the material against subsequent PEC etching. Note that SCL proved to be an efficient approach for the purpose of manufacturing GaN nanowalls and nanowires [32].…”

Section: Technologies Applied For the Fabrication Of Gan Membrane Strmentioning

confidence: 99%

GaN nanostructuring for the fabrication of thin membranes and emerging applications

Tiginyanu¹,

Ursaki²

2014

Turk J Phys

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Abstract:We present a review of technological methods developed in recent years for the purpose of gallium nitride nanostructuring, with the main focus on fabrication of thin GaN membranes. In particular, we report on traditional methods of wet etching undercutting for membrane manufacturing, technologies applied for the fabrication of photonic crystal structures based on GaN nanomembranes, double side processing, and surface charge lithography. Prospects of membrane applications in photonic devices, sensors, and microoptoelectromechanical and nanoelectromechanical systems are discussed, taking into account the advantageous piezoelectric, optical, and mechanical properties of GaN and related III-V nitride materials.

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“…In this paper, we demonstrate the fabrication of GaN PhC ultrathin membranes using a cost-effective technology based on surface charge lithography [10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Fabrication of photonic crystal circuits based on GaN ultrathin membranes by maskless lithography

et al. 2015

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We report on maskless fabrication of photonic crystal (PhC) circuits based on ultrathin (d ~ 15 nm) nanoperforated GaN membranes exhibiting a triangular lattice arrangement of holes with diameters of 150 nm. In recent years, we have proposed and developed a cost-effective technology for GaN micro-and nanostructuring, the so-called surface charge lithography (SCL), which opened wide possibilities for a controlled fabrication of GaN ultrathin membranes. SCL is a maskless approach based on direct writing of negative charges on the surface of a semiconductor by a focused ion beam (FIB). These charges shield the material against photo-electrochemical (PEC) etching. Ultrathin GaN membranes suspended on specially designed GaN microstructures have been fabricated using a technological route based on SCL with two selected doses of ion beam treatment. Calculation of the dispersion law in nanoperforated membranes in the approximation of scalar waves is indicative of the occurrence of surface and bulk modes, and there is a range of frequencies where only surface modes can exist. Advantages of the occurrence of two types of modes in ultrathin nanoperforated GaN membranes from the point of view of their incorporation in photonic and optoelectronic integrated circuits are discussed. Along with this, we present the results of a comparative analysis of persistent photoconductivity (PPC) and optical quenching (OQ) effects occurring in continuous and nanoperforated ultrathin GaN suspended membranes, and assess the mechanisms behind these phenomena.

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Fabrication of GaN nanowalls and nanowires using surface charge lithography

Cited by 23 publications

References 10 publications

Design and maskless fabrication of ultrathin suspended membranes of GaN

Design and maskless fabrication of ultrathin suspended membranes of GaN

GaN nanostructuring for the fabrication of thin membranes and emerging applications

Fabrication of photonic crystal circuits based on GaN ultrathin membranes by maskless lithography

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