Fabrication of GaN nanocrystallites and their application to UV/blue electroluminescent devices

Abstract

The fabrication of UV/blue electroluminescent devices (ELDs) based on GaN nanocrystallites (NCs) is reported. The electroluminescence spectra of GaN NC‐based ELDs included UV spectral regions. Some of the emission energy is higher than that of the GaN band‐gap transition, which is due to the quantum size effect. The chemical bonding in GaN NCs was measured using X‐ray photoelectron spectroscopy (XPS) with Ar ion beam etching (IBE). The results indicate that GaN NCs consist of a GaN core surrounded by an oxide shell. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Electroluminescent devices fabricated using GaNO crystallites

“…Electroluminescent devices fabricated using GaN crystallites are one of the candidates for low-cost light-emitting devices [3]. However, the total surface area of GaN crystallites is very large compared with that of GaN films, which leads to a high level of surface recombination.…”