Electroluminescent devices fabricated using GaNO crystallites

Abstract

Electroluminescent devices (ELDs) were fabricated using GaNO crystallites. The GaNO crystallites were obtained by the oxidation of GaN crystallites before their annealing in vacuum. Although the cathodoluminescence spectra of GaNO crystallites were broad compared with those of GaN crystallites, the spectral intensities of GaNO crystallites are higher than those of GaN crystallites. In the fabrication of lightemission layers in the ELDs, sedimentation with the selection of GaNO crystallite size was performed. The size selection of GaNO crystallites is effective for the realization of thin and uniform emission layers. It leads to the reduction of operating voltage.

Influence of oxygen incorporation on the defect structure of GaN microrods and nanowires. An XPS and CL study

“…Furthermore, high concentrations of oxygen atoms within the GaN lattice may generate gallium oxynitride (GaON) compounds, with characteristic crystal structures such as spinel, cubic or sphalerite [16,17]. However, the formation of these ternary compounds is mostly reported in processes where nitrogen is incorporated in the gallium oxide lattice [16][17][18][19], instead of processes where oxygen is incorporated into the gallium nitride lattice [20]. This dissimilarity could be related to the outstanding stability of the GaN wurtzite lattice upon the presence of strong densities of point defects and dislocations, which has been consistently seen in GaN epitaxial films [21,22].…”