Fabrication of epitaxial SiGe optical waveguide structures

The influence of H2/Ar ratio on Ge content of the μc-SiGe:H films deposited by PECVD

“…The reason is that the decrease of Ge content, which results in the decrease of density [20]. Meanwhile, the absorption coefficients of c-SiGe:H films also decrease with the decrease of Ge content [21]. The optical band gap of the films is plotted in Fig.…”

Crystalline SiGe films grown on Si substrates using laser-assisted plasma-enhanced chemical vapor deposition at low temperature

“…Hence, SiGe semiconductors have been widely used in applications of electronic devices 1-4 and optoelectronic devices. [5][6][7][8] There are many widely investigated techniques and methods, such as ultrahigh vacuum chemical vapor deposition, 9 low-energy plasma-enhanced chemical vapor deposition, 10 high-frequency plasmaenhanced chemical vapor deposition, 11 magnetron sputter epitaxy, 12 liquid phase epitaxy, 13 molecular beam epitaxy, 14 etc., have all been developed to grow SiGe films. In this work, a laser-assisted plasma-enhanced chemical vapor deposition ͑LAPECVD͒ method was developed to grow crystalline SiGe films on Si substrates at low temperature without the need of post-thermal annealing.…”