Fabrication of epitaxial Cu3Ge on sapphire with controlled crystallinity and planar defects

Wu, Fan; Zheng, Jie; Cai, Wei; Yao, Nan; Zhu, Yuntian; Narayan, J.

doi:10.1016/j.jallcom.2015.03.143

Cited by 6 publications

(3 citation statements)

References 38 publications

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“…the schematic illustration of the matching scenario at the interface between e 1 -Cu 3 Ge (0 1 0) and c-sapphire (0 0 1), and (c) the HRTEM image at a higher magnification showing the atomic structure at the interface in detail, at the region close to that of (a) [42].…”

Section: Resultsmentioning

confidence: 99%

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Epitaxial Cu3Ge Thin Film: Fabrication, Structure, and Property

Wu¹,

Yao²

2016

Nanoelectronics and Materials Development

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In this paper, the fabrication and electrical property characterization of epitaxial Cu 3 Ge thin film are performed. By adjusting deposition parameters, the crystallinity of the asgrown Cu 3 Ge thin films is improved, with the formation of twins within it. The average work function of epitaxial Cu 3 Ge thin film is measured to be ∼4.47 + 0.02 eV, rendering it a desirable mid-gap gate metal for applications in complementary metal-oxide semiconductor (CMOS) devices. The present study therefore shows an epitaxial Cu 3 Ge thin film that is promising for applications.

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Section: Resultsmentioning

confidence: 99%

“…typical HRTEM image showing the planar defects in Cu 3 Ge thin film, in which twins and stacking faults coexist[42].…”

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confidence: 99%

Epitaxial Cu3Ge Thin Film: Fabrication, Structure, and Property

Wu¹,

Yao²

2016

Nanoelectronics and Materials Development

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“…Cu3Ge is one of the best alternatives to Cu for contacts/ interconnections in microelectronics industry, owing to its thermal stability up to 450 °C [1,2] and low bulk resistivity (~8 + 2 μΩ cm) over a large Ge composition range of 25-35 at.% [1,3]. The out diffusion of Cu is suppressed [4], such that diffusion barrier is no longer needed and the service life of interconnects can be improved considerably.…”

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confidence: 99%