Epitaxial Cu3Ge Thin Film: Fabrication, Structure, and Property

Abstract

In this paper, the fabrication and electrical property characterization of epitaxial Cu 3 Ge thin film are performed. By adjusting deposition parameters, the crystallinity of the asgrown Cu 3 Ge thin films is improved, with the formation of twins within it. The average work function of epitaxial Cu 3 Ge thin film is measured to be ∼4.47 + 0.02 eV, rendering it a desirable mid-gap gate metal for applications in complementary metal-oxide semiconductor (CMOS) devices. The present study therefore shows an epitaxial Cu 3 Ge thin film that is promising for applications.