2020
DOI: 10.1016/j.jcis.2019.12.074
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Fabrication of dual-hollow heterostructure of Ni2CoS4 sphere and nanotubes as advanced electrode for high-performance flexible all-solid-state supercapacitors

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Cited by 18 publications
(4 citation statements)
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“…The Ni1.5Co1.5S4/g-C3N4//AC supercapacitor delivers high energy density of 49.0 Wh kg −1 at a power density of 799.0 W kg −1 . These values surpass those of previously reported symmetric and asymmetric supercapacitors based on g-C3N4 composites, such as g-C3N4@Ni(OH)2 [24], ZnS/g-C3N4 [42] and porous g-C3N4 [43][44][45].…”
Section: Resultscontrasting
confidence: 73%
“…The Ni1.5Co1.5S4/g-C3N4//AC supercapacitor delivers high energy density of 49.0 Wh kg −1 at a power density of 799.0 W kg −1 . These values surpass those of previously reported symmetric and asymmetric supercapacitors based on g-C3N4 composites, such as g-C3N4@Ni(OH)2 [24], ZnS/g-C3N4 [42] and porous g-C3N4 [43][44][45].…”
Section: Resultscontrasting
confidence: 73%
“…Here, our NMS@S-gC//AC device in a two-series connection efficiently powers all LEDs ranging from red to blue. The overall outcome of this investigation discloses an enhanced performance of asymmetric g-C 3 N 4 composite-based supercapacitors using a new approach of self-assembled hierarchical silkworm-like electrode materials. In previous investigations, various approaches had been reported for Co embodied with g-C 3 N 4 nanostructures because of superior theoretical values of Co and g-C 3 N 4 for storage applications, but here, we reported a new strategy with Mo rather than Co and the basic matrix also changed from g-C 3 N 4 to S-g-C 3 N 4 . Basically, g-C 3 N 4 is a 2D structure with a high nitrogen content, which enhances the electron-donor properties of the matrix and further leads to improved electron transportation of active material.…”
Section: Resultsmentioning
confidence: 61%
“…PVA/KOH gel was utilized as the solid polymer electrolyte. The specific capacitance ( C s ) of the electrode based on CV and GCD curves was calculated by eqs and (). The specific capacitance of the devices based on CV and GCD curves was obtained by eqs and (). where C s (F g –1 ) and C cell (F g –1 ) represents the specific capacitance of the electrode and device, m (g) is the loading mass, v (V s –1 ) is the potential scan rate, ΔV (V) corresponds to the potential window, Δ t (s) refers to the discharge time, and I (A) is the discharge current.…”
Section: Methodsmentioning
confidence: 99%