Fabrication of double-sided Tl2Ba2CaCu2O8 thin films on 2-in. LaAlO3 substrates by pulsed laser deposition and post-annealing

Li, Song Lin; Chen, Y.F.; Xu, Xiangyang; Wang, R.L.; Tian, H. F.; Lin, De-Hua; Zheng, Dewen

doi:10.1016/j.physc.2007.04.031

Cited by 4 publications

(1 citation statement)

References 5 publications

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“…Since Tl-based high temperature superconducting (HTS) material was discovered by Z Z Sheng et al [1][2], extensive study on the fabrication and application of the Tl-based films has been carried out worldwide [3][4][5][6]. In some applications fields, Tl 2 Ba 2 CaCu 2 O 8 (Tl-2212) films are particularly attractive owing to their high critical temperature, high critical current density [3,7], good chemical stability, strong resistance to moisture and low microwave surface resistance [8].…”

Section: Introductionmentioning

confidence: 99%

Growth of Tl-2212 Films on CeO<sub>2</sub>-Buffered Sapphire Substrates

Xie

Yue

Huang

et al. 2011

AMR

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Tl2Ba2CaCu2O8(Tl-2212) films were prepared on r-cut sapphire substrates buffered with CeO2by dc magnetron sputtering and post-annealing method. Thein situtwo-temperature process was used to grow CeO2buffer layers. XRD and AFM measurements showed that CeO2films deposited at temperature of 370-470°C were excellent c-axis orientation and had smooth surface. SEM observations demonstrated that the Tl-2212 films’ surface morphology was changed from condensing crystal structure to plate-like structure when the CeO2deposition temperature was increased. The best Tl-2212 film’s critical temperature Tccan reach to 108.3 K, and critical current density Jcobtained at 5.33 MA/cm2(77 K, 0 T).

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