Fabrication of CuInS2 thin film by electrodeposition of Cu–In alloy

Effects of Preparation Conditions on the CuInS2 Films Prepared by One‐Step Electrodeposition Method

“…The deposition current increases with increasing deposition potentials. At any deposition potentials, the current decreases suddenly within initial 2 min, which is the result of concentration gradients developed in the boundary layer close to an electrode surface at short times at initial deposition period [16]. After initial period, the currents at deposition potentials −0.7, −0.8, and −0.9 V are stable, while the currents at potentials −1.0 and −1.2 V increased gradually.…”

“…Preparation methods of CuInS 2 film mainly include sputtering [6], evaporation [7], spray pyrolysis [8,9], chemical bath deposition [10], and electrodeposition [11][12][13][14][15][16]. Among these methods, sputtering and evaporation are two main methods for industrial production [7,[17][18][19][20].…”

Inexpensive methodology to prepare TiO2/CuInS2hetero-junctions for photovoltaic applications

“…It is well-known that various types of chalcopyrites, namely CuInS 2 (CIS), CuInSe 2 (CISe) and Cu(In,Ga)Se 2 (CIGS) are frequently used as absorbers for solar cells due to their excellent optical properties . In particular, CIS has several interesting characteristics including high absorption coefficient (around of 10 5 cm -1 ) at λ ~ nm and direct band gap optical (E g ) value within 1.3-1.5 eV [3][4][5] , which is close to the optimum range for photovoltaic conversion. CuInS 2 is also highly regarded for being environmentally friendly, principally when compared to CuInSe 2 where the high toxicity of Se represents a disadvantage during preparation and disposal of the cells.…”

Formation of p-type CuInS2 absorber layers via sulfurization of co-electrodeposited Cu–In precursors

“…[14][15][16][17][18][19][20][21][22] In particular, the latter provides simple, inexpensive and scalable production of large area lms coupled with close control over the growth process. [14][15][16][17][18][19][20][21][22] In particular, the latter provides simple, inexpensive and scalable production of large area lms coupled with close control over the growth process.…”

“…[14][15][16][17][18][19][20][21][22] In particular, the latter provides simple, inexpensive and scalable production of large area lms coupled with close control over the growth process. [20][21][22][23][24][25] Electrodeposition of Cu-In alloys has been shown to yield intermetallic compounds in the as-deposited lms; 12,26,27 this is advantageous since Cu 11 In 9 has been reported to be a most suitable precursor for CuInS 2 formation. [20][21][22][23][24][25] Electrodeposition of Cu-In alloys has been shown to yield intermetallic compounds in the as-deposited lms; 12,26,27 this is advantageous since Cu 11 In 9 has been reported to be a most suitable precursor for CuInS 2 formation.…”