Effects of Preparation Conditions on the CuInS₂ Films Prepared by One‐Step Electrodeposition Method

Abstract

CuInS2thin films were prepared onto indium tin oxide (ITO) substrates by sulfurization of electrodeposited CuxInySzprecursor films under S atmosphere. The influences of deposition potential, Cu2+/In3+ratio, sulfurization temperature, and sulfur content on the CuInS2thin films were investigated. Phases and structures were characterized by powder X-ray diffraction and Raman spectroscopy; surface morphology was characterized by Scanning Electron Microscopy; optical and electrical properties were characterized by UV-Vis absorption and Mott-Schottky curves, respectively. As a result, the optimal well-crystallized CuInS2films preparation parameters were determined to be deposition potential of −0.8 V, Cu2+/In3+ratio of 1.4, sulfur content of 1 g, and the sulfurization temperature of 550°C for 1 h; CuInS2thin films prepared by one-step electrodeposition present the p-type semiconductor, with thickness about 4-5 μm and their optical band gaps in the range of 1.53~1.55 eV.

Effect of supporting electrolyte concentration on one-step electrodeposited CuInS2 films for ZnS/CuInS2 solar cell applications

“…The effect of different experimental conditions on the one-step electrodeposition of CIS films has been thoroughly investigated. So far, the influence of deposition time [17], concentration of precursors [21], applied potential [22] and complexing agents [2] has been studied. However, the effect of supporting electrolyte concentration on one-step electrodeposited CIS film properties has so far not been addressed.…”