2014
DOI: 10.1039/c3ta13533k
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Fabrication of Cu2ZnSnS4solar cells with 5.1% efficiency via thermal decomposition and reaction using a non-toxic sol–gel route

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Cited by 256 publications
(195 citation statements)
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“…As seen for as-deposited film the dominant Raman peak is observed at *338 cm -1 which is in consistent with the peak of CZTS mono-grain powder reported in literature [26]. With an increase in calcination temperature the Raman peak shift towards lower wavenumber.…”
Section: Film Characterizationsupporting
confidence: 77%
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“…As seen for as-deposited film the dominant Raman peak is observed at *338 cm -1 which is in consistent with the peak of CZTS mono-grain powder reported in literature [26]. With an increase in calcination temperature the Raman peak shift towards lower wavenumber.…”
Section: Film Characterizationsupporting
confidence: 77%
“…In addition, it also shows the presence of C peak as well as O peak at *285 and *531 eV respectively as impurities. These contaminants have also been identified in CZTS films by other workers [26]. The binding energy peak observed at *932.80 eV corresponding to the Cu 2p 3/2 core level in CZTS film [29].…”
Section: X-ray Photoelectron Spectroscopy (Xps) Analysismentioning
confidence: 88%
“…Other physical and chemical techniques are being currently investigated to prepare CZTS thin films: thermal evaporation and subsequent annealing at atmospheric pressure achieving a performance of 8.4% [6], reactive pulsed dc magnetron co-sputtering of Cu-Zn-Sn-S in an atmosphere of H 2 S and subsequent annealing producing a 7.9%-CZTS solar cell [7], electroplating metal stacks converted into CZTS by high temperature sulfurization with a 7.3 % efficiency-device [8], thermal decomposition and reaction using a non-toxic sol-gel route producing 5.1 %-CZTS solar cells [9], single step sputtering, which has been shown as a facile and cost-effective preparation method [10], rapid thermal process of reactively sputtered precursors yielding 4.6 % efficiency for CZTS-devices [11], pulsed laser deposition followed by post-annealing achieving a 4.3 % CZTS-based device [12], etc.…”
Section: Introductionmentioning
confidence: 99%
“…Recently, various approaches have been developed to fabricate the absorber layers, briefly including vacuumbased deposition and non-vacuum-based solution process; both strategies have yielded a remarkable improvement in photovoltaic performance [2][3][4][5][6][7][8]. Compared to vacuumbased approaches, non-vacuum technologies such as electrodeposition approach [9][10][11], milling dispersion approach [12], nanoparticle-based approach [13][14][15][16], hydrazine-based approach [17][18][19], and sol-gel approach [20][21][22][23][24] are more feasible for industrial production. Among those solution-based process, the hydrazine-based deposition has made the great progress, achieving the power conversion efficiency (PCE) of 12.6 % [25].…”
Section: Introductionmentioning
confidence: 99%