Fabrication of carbon nanotube field-effect transistors in commercial silicon manufacturing facilities

Bishop, Mindy D.; Hills, Gage; Srimani, Tathagata; Lau, Christian; Murphy, Denis; Fuller, Samuel H.; Humes, Jefford; Ratkovich, Anthony S.; Nelson, Matthew D.; Shulaker, Max M.

doi:10.1038/s41928-020-0419-7

Cited by 175 publications

(92 citation statements)

References 35 publications

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“…110 On the other hand, in noncovalent modifications surfactants, polymers, aromatic compounds, and biomolecules are adsorbed to or wrap around the CNTs. [111][112][113][114] As a result, the unique structure of CNTs is persevered at a cost of introducing new impurities to the system. The exfoliation is achieved via electrostatic forces or steric hinderance effects.…”

Section: Dispersionmentioning

confidence: 99%

“…Among them, top-gated CNTFETs are simpler and commonly used to fabricate high performance CNTFETs already. 75,85,92,113,171 In gate-all-around architecture, the CNT is completely surrounded by the contact which is natural to CNT's shape and Please do not adjust margins Please do not adjust margins gives superb electrostatic control over it. 173 It is expected that gate-all-around yields lower leakage current due to superior electrostatic control and higher on/off ratio, making it a promising candidate for future devices.…”

Section: Field-effect Transistorsmentioning

confidence: 99%

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Critical challenges and advances in the carbon nanotube–metal interface for next-generation electronics

et al. 2021

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Section: Dispersionmentioning

confidence: 99%

Section: Field-effect Transistorsmentioning

confidence: 99%

Critical challenges and advances in the carbon nanotube–metal interface for next-generation electronics

et al. 2021

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“…However, their structure complexity of CNTs-based nanodevice fabrication results in the variability of their mechanical properties or electrical properties. To overcome the hinders on the progress of nanodevice fabrication, significant efforts have been expended on the production of CNTs macrostructures [ 53 ]. The long multi-walled CNTs ropes are prepared using the floating catalyst chemical vapour deposition fabrication method.…”

Section: Cnts-based Strain Sensorsmentioning

confidence: 99%

Development and Application of Resistance Strain Force Sensors

Zhao

Liu

et al. 2020

Sensors

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Resistance strain force sensors have been applied to monitor the strains in various parts and structures for industrial use. Here, we review the working principles, structural forms, and fabrication processes for resistance strain gauges. In particular, we focus on recent developments in resistance stress transfer for resistance strain force sensors and the creep effect due to sustained loads and/or temperature variations. Various error compensation methods to reduce the creep effect are analyzed to develop a metrology standard for resistance strain force sensors. Additionally, the current status of carbon nanotubes (CNTs), silicon carbide (SiC), gallium nitride (GaN), and other wide band gap semiconductors for a wide range of strain sensors are reviewed. The technical requirements and key issues of resistance strain force sensors for future applications are presented.

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“…High‐density and high‐uniformity sc‐SWCNT thin films are essential to achieve high‐performance SWCNT TFTs with large mobility, high on/off ratio, and small subthreshold swing (SS). [ 20 ] However, how to obtain such films on different substrates is still a challenge since there are some differences in their chemical and physical properties such as solvent‐resistance, corrosion‐resistance, heat‐resistance, and roughness. It has been proved that sorted sc‐SWCNTs by conjugated polymers are easy to immobilize on the vacuum deposition (such as atomic layer deposition, sputtering, e‐beaming deposition, plasma enhanced chemical vapor deposition) of HfO x , AlO x , SiO 2 , and ZrO x surfaces.…”

Section: Introductionmentioning

confidence: 99%

A Universal Method for High‐Efficiency Immobilization of Semiconducting Carbon Nanotubes toward Fully Printed Paper‐Based Electronics

Ren

Wang

et al. 2021

Adv Elect Materials

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Semiconducting single‐walled carbon nanotubes (sc‐SWCNTs) are promising candidates for constructing high‐performance fully printed flexible thin film transistors (TFTs) and circuits. How to achieve highly dense and uniform SWCNT thin films on different substrates has become a key scientific issue for printed flexible carbon‐based electronics. In this work, a universal method to efficiently immobilize conjugated polymer‐sorted sc‐SWCNTs on different substrates using solution‐processable SiO2 thin film as the adhesion layer is developed. Fully printed top‐gate SWCNT TFTs are successfully constructed by combining aerosol jet and inkjet printing using silver electrodes and ionic liquid‐cross‐linkable‐poly(4‐vinylphenol) as metal contact electrodes and dielectrics, respectively. Consequently, the fully printed paper‐based SWCNT TFTs represent extraordinary mechanical flexibility and good electrical properties with high on/off ratio (higher than 105), small subthreshold swing (≈70 mV dec−1), and small hysteresis, as well as high carrier mobility (up to 10.8 cm2 V−1 s−1) at low gate voltages (±1 V). In addition, the resistor‐loaded fully printed paper‐based inverters are also achieved using printed carbon nanotube conductive lines as the loaded resistors, exhibiting relatively large gains (16 at VDD of 1 V) and excellent mechanical flexibility. This work represents an encouraging advancement toward the practical applications of SWCNTs for high‐performance, low‐cost, and eco‐friendly paper‐based electronics.

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Fabrication of carbon nanotube field-effect transistors in commercial silicon manufacturing facilities

Cited by 175 publications

References 35 publications

Critical challenges and advances in the carbon nanotube–metal interface for next-generation electronics

Critical challenges and advances in the carbon nanotube–metal interface for next-generation electronics

Development and Application of Resistance Strain Force Sensors

A Universal Method for High‐Efficiency Immobilization of Semiconducting Carbon Nanotubes toward Fully Printed Paper‐Based Electronics

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