Fabrication of Asymmetric GaN/InN/InGaN/GaN Quantum-Well Light Emitting Diodes for Reducing the Quantum-Confined Stark Effect in the Blue-Green Region

Che, Song-Bek; Yuki, Akihiko; Watanabe, Hiroshi; Ishitani, Yoshihiro; Yoshikawa, Akihiko

doi:10.1143/apex.2.021001

Cited by 37 publications

(28 citation statements)

References 15 publications

(19 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…High quality InN layers in GaN matrix with a thickness of 1-2 ML and atomically sharp interfaces have already been fabricated [31,32]. Both photoluminescence [31] and electroluminescence [33] originating from electronhole recombination have been observed.…”

mentioning

confidence: 99%

Polarization-Driven Topological Insulator Transition in aGaN/InN/GaNQuantum Well

et al. 2012

View full text Add to dashboard Cite

Topological insulator (TI) states have been demonstrated in materials with narrow gap and large spin-orbit interactions (SOI). Here we demonstrate that nanoscale engineering can also give rise to a TI state, even in conventional semiconductors with sizable gap and small SOI. Based on advanced first-principles calculations combined with an effective low-energy k•p Hamiltonian, we show that the intrinsic polarization of materials can be utilized to simultaneously reduce the energy gap and enhance the SOI, driving the system to a TI state. The proposed system consists of ultrathin InN layers embedded into GaN, a layer structure that is experimentally achievable.

show abstract

mentioning

confidence: 99%

Polarization-Driven Topological Insulator Transition in aGaN/InN/GaNQuantum Well

et al. 2012

View full text Add to dashboard Cite

show abstract

“…After this, important improvements were achieved regarding smaller sizes and higher densities [101][102][103][104][105][106][107], and recently the emission, even very poor, of InN QDs [108,109] and growth and optical properties of cubic InN dots [110] have been reported. Other types of InN nanostructures fabricated so far include single [111] and multiple [112][113][114][115] quantum wells, nanocolumns [116,117], and nanowires [118][119][120]. However, even if the number of publications related to these nanomaterials has increased considerably during the last years, the number of them including characterization by HRTEM still remains scarce.…”

Section: Review On Inn Nanostructuresmentioning

confidence: 99%

High-Resolution Electron Microscopy of Semiconductor Heterostructures and Nanostructures

Sales

Beltrán

Lozano

et al. 2012

Semiconductor Research

View full text Add to dashboard Cite

This chapter briefly describes the fundamentals of high-resolution electron microscopy techniques. In particular, the Peak Pairs approach for strain mapping with atomic column resolution, and a quantitative procedure to extract atomic column compositional information from Z-contrast high-resolution images are presented. It also reviews the structural, compositional, and strain results obtained by conventional and advanced transmission electron microscopy methods on a number of III-V semiconductor nanostructures and heterostructures.

show abstract

“…By controlling well thickness, the long wavelength emission can be achieved at relatively lower In content, however, the overlap of wave function decreases with the increasing of QW thickness. According to recent reports [23,24], QWs of irregular structures may lead to carrier redistribution in QWs and overlap of electron and hole wave function enhancement. Of all these irregular structures, the ultra-thin high In content insert layer seems useful and applicable in our wide QW experiments.…”

Section: Introductionmentioning

confidence: 99%

Improved Yellow Light Emission in the Achievement of Dichromatic White Light Emitting Diodes

Zhao

Wei

et al. 2013

MRS Proc.

View full text Add to dashboard Cite

A study about the achievement of dichromatic white light-emitting diodes (LEDs) was performed. A series of dual wavelength LEDs with different last quantum-well (LQW) structure were fabricated. The bottom seven blue light QWs (close to n-GaN layer) of the four samples were the same. The LQW of sample A was 3 nm, and that of sample B, C and D were 6 nm, a special high In content ultra-thin layer was inserted in the middle of the LQW of sample C and on top of that of sample D. XRD results showed In concentration fluctuation and good interface quality of the four samples. PL measurements showed dual wavelength emitting, the blue light peak position of the four samples were almost the same, sample A with a narrower LQW showed an emission wavelength much shorter than that of sample B, C, D. EL measurement was done at an injection current of 100 mA. Sample A only showed LQW emission due to holes distribution. Because of wider LQW, the emission wavelength of sample B, C and D was longer and peak intensity was weaker. Sample D with insert layer on top of LQW showed strongest yellow light emission with a blue peak. As the injection current increased, sample A showed highest output light power due to narrower LQW. Of the other three samples with wider LQW, sample D showed highest output power. Effective yellow light emission has always been an obstacle to the achievement of dichromatic white LED. Sample D with insert layer close to p-GaN can confine the hole distribution more effectively hence the recombination of holes and electrons was enhanced, the yellow light emission was improved and dichromatic white LED was achieved.

show abstract

Fabrication of Asymmetric GaN/InN/InGaN/GaN Quantum-Well Light Emitting Diodes for Reducing the Quantum-Confined Stark Effect in the Blue-Green Region

Cited by 37 publications

References 15 publications

Polarization-Driven Topological Insulator Transition in aGaN/InN/GaNQuantum Well

Polarization-Driven Topological Insulator Transition in aGaN/InN/GaNQuantum Well

High-Resolution Electron Microscopy of Semiconductor Heterostructures and Nanostructures

Improved Yellow Light Emission in the Achievement of Dichromatic White Light Emitting Diodes

Contact Info

Product

Resources

About