Fabrication of an integrated 670nm VCSEL-based sensor for miniaturized fluorescence sensing

O’Sullivan, Thomas D.; Munro, Elizabeth A.; Harris, James S.; Levi, Ofer

doi:10.1117/12.842096

Cited by 1 publication

(1 citation statement)

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“…Monolithic integration of the VCSEL and the photodetector device can result in lower packaging cost and reduce the CSAC system volume . The approaches for photodetector integrated VCSEL devices include the fabrication of P‐I‐N , metal‐semiconductor‐metal (MSM) , or resonant cavity photodiode (RCPDs) . However, additional epitaxial material is required for the first two ways.…”

Section: Introductionmentioning

confidence: 99%

Design and performance of high temperature operating resonant-cavity photodiodes based on 795 nm-VCSEL structure

Zhao

Sun

Sheng

et al. 2016

Phys. Status Solidi A

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We present detailed simulated and experimental results on spectral response of high temperature operating resonant‐cavity photodiodes (RCPDs). Room temperature external quantum efficiency (EQE) spectrum shows peaks at resonance wavelength, ground‐state emission, and lower reflectivity position. The EQE is ∼1.25, ∼0.7, and ∼3.75%, respectively, at the above three peak positions, i.e., 793, 778, and 743 nm. The maximum EQE increases from ∼1.25 to ∼18% as incident light angle increasing from 0 to 60°. The bandgap of AlGaAs barrier layer was also obtained by the angle dependence of EQE measurement. The amount of EQE/responsivity peak shift with temperature can be determined to be Δλ = T × 0.065 nm K−1, which is consistent with the temperature dependence of CM. The maximum responsivity increases from ∼0.01 to ∼0.19 A W−1 when temperature increasing from 300 to 370 K at −1 V bias. For high temperature operating RCPDs, the EQE/responsivity are largely governed by the total absorption within the active region. The performance of RCPDs can be further improved by increasing the pairs of bottom DBR and optimizing the pairs of top DBR.

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Section: Introductionmentioning

confidence: 99%