Design and performance of high temperature operating resonant-cavity photodiodes based on 795 nm-VCSEL structure

Abstract

We present detailed simulated and experimental results on spectral response of high temperature operating resonant‐cavity photodiodes (RCPDs). Room temperature external quantum efficiency (EQE) spectrum shows peaks at resonance wavelength, ground‐state emission, and lower reflectivity position. The EQE is ∼1.25, ∼0.7, and ∼3.75%, respectively, at the above three peak positions, i.e., 793, 778, and 743 nm. The maximum EQE increases from ∼1.25 to ∼18% as incident light angle increasing from 0 to 60°. The bandgap of AlGaAs barrier layer was also obtained by the angle dependence of EQE measurement. The amount of EQE/responsivity peak shift with temperature can be determined to be Δλ = T × 0.065 nm K−1, which is consistent with the temperature dependence of CM. The maximum responsivity increases from ∼0.01 to ∼0.19 A W−1 when temperature increasing from 300 to 370 K at −1 V bias. For high temperature operating RCPDs, the EQE/responsivity are largely governed by the total absorption within the active region. The performance of RCPDs can be further improved by increasing the pairs of bottom DBR and optimizing the pairs of top DBR.

Low Threshold Current and Polarization-Stabilized 795 nm Vertical-Cavity Surface-Emitting Lasers

“…However, 795 nm VCSELs have attracted more attention because of their applicability for rubidium atomic clocks, which provide a stable time and frequency reference for a variety of applications such as mobile and wired telecommunication infrastructure, broadcasting products, defense applications, calibration equipment and scientific instrumentation [ 26 ]. Investigations on 795 nm VCSELs have focused on improving their high-temperature performance, typically at 80 °C [ 27 , 28 ], or achieving stable single-mode operation at a wavelength of 795 nm with high output power at elevated temperatures [ 29 , 30 ]. However, there has been relatively less attention paid to the polarization control of 795 nm VCSELs.…”